Showing papers in "Journal of Crystal Growth in 1983"

TL;DR: In this paper, a crystal diamond predominantly composed of {100} and {111} faces was grown on a non-diamond substrate from a gaseous mixture of hydrogen and methane under microwave glow discharge conditions.

TL;DR: In this article, the roles of natural convection in the melt and the shape of the melt/solid interface on radial dopant segregation are analyzed for a prototype of vertical Bridgman crystal growth system by finite element methods that solve simultaneously for the velocity field in the melted, the shape in the solidification isotherm, and the temperature distribution in both phases.

TL;DR: In this article, a modified form of the Wulff construction was used to derive theoretical shapes and total surface energies for twinned particles in face-centred materials, and two possible configurations were examined, an arrangement where the crystals are symmetric about the twin boundaries and an asymmetric configuration.

TL;DR: In this paper, the influence of isoelectronic doping on the properties of LEC GaAs and InP crystals has been studied and a decrease of the dislocation density was obtained using In and Sb as dopants in GaAs crystals, and In, Sb, As and Ga as a dopant in InP.

TL;DR: In this article, a numerical solution has been presented, describing the transient development of the fluid flow field and the temperature distribution in a rectangular cavity in the presence of an imposed magnetic field.

TL;DR: In this article, the epitaxial lateral overgrowth (ELO) process is used for the growth of silicon film over an SiO2 mask by the CVD technique.

TL;DR: In this paper, the authors used linear perturbation theory to study morphological instability for rapid directional solidification at constant velocity under conditions where there is significant departure from local equilibrium at an initially planar solid-liquid interface.

TL;DR: In this article, a review of the influence of convection on the growth of crystals from solution is presented. But the authors do not consider the effect of mixing and mixing on the rate of secondary nucleation.

TL;DR: The importance of Czochralski grown silicon as a basic material for solid-state electronics is outlined in this paper, where a short review is given of the different possibilities for growing silicon crystals and the history of the Czchralski technique.

TL;DR: The results from the United States Department of Energy Polycrystalline Thin-film Photovoltaic Device Program are presented in this article, where the authors focus on preparation (emphasizing thin-film deposition) and characterization of semiconducting materials such as Cu2 −xS, Cu2−xSe, CdTe and CuInSe2.

TL;DR: In this paper, the relationship between the composition of the III/V alloy and the vapor from which it is grown is examined in detail for several systems of the type AxB1 − xC where A and B are nonvolatile group III elements and the V/III ratio in the vapor phase is ⋙ 1.

TL;DR: In this article, graphoepitaxy and zone-melting recrystallization of patterned Si films are reviewed, with emphasis on their application to silicon on insulator (SOI).

TL;DR: In this article, the etch rate and surface morphology of n-type, Si doped, 100-GaAs versus composition of CrO3-HF-H2O mixtures were studied.

TL;DR: In this article, a review of the growth techniques used to crystallize transition metal trichalcogenides is presented, and the experimental conditions which allow the growth of usable single crystals from the vapour phase are described.

TL;DR: In this article, the authors point out limitations of the most commonly used mass transfer models, and physically justifiable analogies between mass, heat and momentum transfer in multicomponent (crystal growth) fluids.

TL;DR: In this article, the use of HgI 2 in high energy resolution X-ray and gamma ray spectrometers which operate at room temperature is discussed and a review of the state of the art is given.

TL;DR: In this article, stable state and time-dependent finite element simulations have been generated to represent transport phenomena in a Czochralski melt, and three basic convection mechanisms, previously recognized in the literature, have been verified.

TL;DR: In this article, the role of growth technique in determining the range of solid compositions which can be produced, the stability of quaternary alloys and the consequences of the miscibility gap and spinodal decomposition on electrical and optical properties of the alloys, and the potential of these alloys for devices.

TL;DR: A review of the methods used to grow HgCdTe with a summary of some of its basic properties and applications can be found in this article, where the fundamental properties discussed briefly are those of prime interest to detector manufacturers: energy gap, intrinsic carrier concentration, and electrical activity of dopants.

TL;DR: In this paper, a general and simple method to calculate exactly the critical temperature for Ising nets on periodic structures is introduced, which can be used to predict the morphological importance of F slices for realistic crystals.

TL;DR: In this paper, the parametric behavior of radial temperature variations within the charge during crystal growth in a Bridgman-Stockbarger configuration is derived by a two-dimensional heat transfer model.

TL;DR: In this paper, the basic pattern of flow in the Czochralski melt is discussed and possible explanations for the catastrophic flow transitions observed in two particular oxide melts are described.

TL;DR: The phase diagram of the important quaternary III/V system AlxGa1-xAsySb1-y has been experimentally explored by analyzing the solid compositions grown by liquid phase epitaxy.

TL;DR: In this article, a mixture of Si and B powders was heated above 1850°C in a crucible made of hexagonal boron nitride under a N2 atmosphere for 2 h.

TL;DR: In this article, the III/V ratio is found to have a major effect on the Sb distribution coefficient for OMVPE growth of GaAs1-xSbx.

TL;DR: The rare earth ions Yb3+(4f13) and Er3+4f11 implanted in InP, GaP and GaAs give rise to strong, sharply structured luminescence bands in the 1.00 and 1.54 μm spectral region.

TL;DR: In this paper, it is demonstrated that by combining optical phase contrast microscopy with a conventional TV system, mono-molecular spiral growth steps on crystals can be observed during the growth in aqueous solution.

TL;DR: In this article, the organometallic vapor phase epitaxial (OMVPE) growth of InP was described for a simple, atmospheric-pressure system using trimethylindium (TMIn) as the In source.

TL;DR: In this paper, the equilibrium roughening transition of the high temperature phase of Ag 2 S (bcc structure) was observed and the size of a facet decreased to zero during heating and was independent of the volume of a crystal was larger than a certain size.

TL;DR: In this article, a zone-melting recrystallization technique for preparing large-area, high-quality Si films on SiO 2 -coated Si wafers is presented.