Journal ArticleDOI
Graphite-strip-heater zone-melting recrystallization of Si films
TLDR
In this article, a zone-melting recrystallization technique for preparing large-area, high-quality Si films on SiO 2 -coated Si wafers is presented.About:
This article is published in Journal of Crystal Growth.The article was published on 1983-10-02. It has received 66 citations till now. The article focuses on the topics: Recrystallization (metallurgy) & Grain boundary.read more
Citations
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Journal ArticleDOI
Frontiers of silicon-on-insulator
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
Journal ArticleDOI
Prolog to Wafer Direct Bonding: From Advance Substrate Engineering to Future Applications in Micro/Nanoelectronics
TL;DR: In this article, the authors describe the prerequisites for the wafer-bonding process to occur and the methods to prepare the suitable surfaces for wafer bonding, and the characterization techniques to assess the quality of the bonded interfaces and to measure the bonding energy are presented.
Patent
Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices
TL;DR: A method and product for monocrystalline semiconductor buried layer contacts formed from recrystallized polycrystalline buried layers is described in this paper, where the product is based on a method and method for monoclassical semiconductor contacts.
Patent
Enhanced radiative zone-melting recrystallization method and apparatus
Chenson Chen,J. S. Im +1 more
TL;DR: In this paper, a zonemelting-recrystallization (ZMR) method is proposed to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film.
Journal ArticleDOI
Crystal growth behaviors of silicon during melt growth processes
TL;DR: In this article, a review of crystal growth mechanisms involving the morphological transformation of the crystal-melt interface, grain boundary formation, parallel-twin formation, and faceted dendrite growth are discussed on the basis of the experimental results of in situ observations.
References
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Journal ArticleDOI
Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization
TL;DR: In this article, the orientation of overlayer films induced by artificial surface patterns was proposed as graphoepitaxy, which is a special case of graphopitaxy induced by surface patterns.
Journal ArticleDOI
Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven
Michael W. Geis,Henry I. Smith,Bor-Yeu Tsaur,John C. C. Fan,D. J. Silversmith,R. W. Mountain +5 more
Journal ArticleDOI
Thermally Induced Strains in Evaporated Films
R. W. Vook,F. Witt +1 more
TL;DR: In this paper, the theoretical results were checked by x-ray diffractometry, using thick gold and copper films bonded to glass substrates by means of thin chromium films.
Journal ArticleDOI
Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators
TL;DR: In this paper, the LESS technique (lateral epitaxy by seeded solidification) was used to grow single-crystal Si films over insulating layers on singlecrystal si substrates.