Journal ArticleDOI
A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters
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TLDR
In this article, the authors proposed an integration scheme for the high-voltage lateral gallium nitride high electron mobility transistors (GaN HEMTs) dies without bonding wires.Abstract:
Compared with silicon and silicon carbide devices, the unique electrical and structural characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them have different requirements for power module integration. This article proposes a novel integration scheme for the high-voltage lateral GaN HEMT dies without bonding wires. Based on the proposed integration scheme, a compact 650 V/30 A GaN power module with low parasitic parameters and high thermal performance is designed. The GaN dies are sandwiched between two ceramic substrates to improve thermal performance and ensure consistent thermal expansion coefficients. The multiple copper layer structure is used to increase wiring flexibility to reduce parasitic parameters. The design of gate and power loop layouts is discussed, and the common-mode (CM) capacitance is optimized. A comprehensive reliability evaluation is also carried out for this integration scheme. Finally, a double-sided cooling 650 V/30 A full-bridge GaN power module with 2.4 cm×1.3 cm×0.17 cm is fabricated. The thermal resistance is reduced by 30%–48% compared with the conventional single-sided cooling module. The power loop and gate loop inductances are reduced to 0.94 nH and 2 nH, respectively, and the CM capacitance is limited to 2.5 pF. The maximum d v /d t of the drain–source voltage is high as 150 V/ns with only 10% overshoot. Based on the power module, a 3.3-kW two-phase interleaved buck converter is developed. It has 820 W/in3 power density and 98.85% peak efficiency.read more
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Peer ReviewDOI
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Asif Imran Emon,.. Mustafeez-ul-Hassan,Abdul Basit Mirza,John Kaplun,Sama Salehi Vala,Fang-Jie Luo +5 more
TL;DR: In this article , the authors provide a review of commercially available gallium nitride-based high electron mobility transistors (GaN HEMTs) and state-of-the-art module packaging technologies adopted for them with a focus on module layout, module integration trends, and identifying their impacts on the GaNHEMT's performance.
Journal ArticleDOI
Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability
TL;DR: In this paper , a high surge current density of 3.4 kA/cm2 (42 A) and a critical transient dissipating energy density of 1.5 J/mJ (18.6 mJ) were achieved in AlGaN/GaN Schottky barrier diodes (SBDs).
Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability
Feng Zhou,Weizong Xu,Yulei Jin,Tian Pei Zhou,Fang-Fang Ren,Dong-Yi Zhou,Dunjun Chen,Rong Zhang,Youdou Zheng,Haixia Liu +9 more
TL;DR: In this paper , the robustness of AlGaN/GaN Schottky barrier diodes (SBDs) was demonstrated for inductive transient shocks in power switching applications.
Journal ArticleDOI
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
TL;DR: In this article , the authors provide a review of commercially available gallium nitride-based high electron mobility transistors (GaN HEMTs) and state-of-the-art module packaging technologies adopted for them with a focus on module layout, module integration trends, and identifying their impacts on the GaNHEMT's performance.
1.2 kV SiC MOSFET Full-Bridge Power Module with Integrated Gate Driver and Coupled Inductor
TL;DR: In this paper , a hybrid DBC/PCB-based 1.2 kV SiC MOSFET integrated module building block (IMBB) with integrated coupled inductor and gate driver circuitry is presented.
References
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Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Journal ArticleDOI
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.
Book
GaN Transistors for Efficient Power Conversion
TL;DR: In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.
Journal ArticleDOI
Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter
David Reusch,Johan Strydom +1 more
TL;DR: In this article, the effect of PCB layout parasitic inductance on efficiency and peak device voltage stress for an eGaN FET-based point of load (POL) converter operating at a switching frequency of 1 MHz, an input voltage range of 12-28 V, an output voltage of 1.2 V, and an output current up to 20 A.
Journal ArticleDOI
Novel nanostructured thermal interface materials: a review
TL;DR: In this paper, the authors identify the key areas for state-of-the-art thermal interface materials (TIMs) research and investigate the current state of the field together with possible future advances.