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GaN Transistors for Efficient Power Conversion
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TLDR
In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.Abstract:
This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.read more
Citations
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Journal ArticleDOI
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
Journal ArticleDOI
Evaluation and Application of 600 V GaN HEMT in Cascode Structure
TL;DR: In this article, the characteristics and operation principles of a 600 V cascode GaN HEMT were studied and compared with a state-of-the-art silicon MOSFET.
Journal ArticleDOI
Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter
David Reusch,Johan Strydom +1 more
TL;DR: In this article, the effect of PCB layout parasitic inductance on efficiency and peak device voltage stress for an eGaN FET-based point of load (POL) converter operating at a switching frequency of 1 MHz, an input voltage range of 12-28 V, an output voltage of 1.2 V, and an output current up to 20 A.
Journal ArticleDOI
GaN Technology for Power Electronic Applications: A Review
TL;DR: In this article, a review of the fundamental material properties of gallium nitride (GaN) as they relate to silicon carbide (SiC) and SiC is presented.
Journal ArticleDOI
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
TL;DR: Optimal gate drive conditions are proposed to provide sufficient gate over-drive to minimize the impact of the $V_{{\rm{TH}}}$ under switching operations.
References
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Journal ArticleDOI
Wireless Power Transfer via Strongly Coupled Magnetic Resonances
Andre B. Kurs,Aristeidis Karalis,Robert Moffatt,John D. Joannopoulos,Peter H. Fisher,Marin Soljacic +5 more
TL;DR: A quantitative model is presented describing the power transfer of self-resonant coils in a strongly coupled regime, which matches the experimental results to within 5%.
Journal ArticleDOI
Thru-Reflect-Line: An Improved Technique for Calibrating the Dual Six-Port Automatic Network Analyzer
G.F. Engen,C.A. Hoer +1 more
TL;DR: This paper will develop the theory for a new procedure for calibrating the dual six-port automatic network analyzer that required only a length of precision transmission line and a "calibration circuit".
Class-e - new class of high-efficiency tuned single-ended switching power amplifiers
TL;DR: Advantages of Class E are unusually high efficiency, a priori designability, large reduction in second-breakdown stress, low sensitivity to active-device characteristics, and potential for high-efficiency operation at higher frequencies than previously published Class-D circuits.
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