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Proceedings ArticleDOI

A High-Gain Sub-2nW OTA for Biomedical Application using 45nm CMOS Technology

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TLDR
In this paper, a three-stage ultra-low power and lowvoltage operational transconductance amplifier (OTA) was designed using transistors in sub-threshold region.
Abstract
A three-stage ultra-low power and low-voltage operational transconductance amplifier (OTA) has been designed using transistors in sub-threshold region. Simulation for 45-nm CMOS technology and a supply voltage of 250 mV yields a DC gain of 66.074dB, phase margin of 64.9° and power consumption of 1.84nW showing its suitability for biomedical application.

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References
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Journal ArticleDOI

Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-/spl mu/m CMOS

TL;DR: A subthreshold leakage power prediction model that takes into account within-die threshold voltage variation and the use of stacked devices to reduce system subth threshold leakage power without reducing system performance are presented.
Journal ArticleDOI

A 60-dB Gain OTA Operating at 0.25-V Power Supply in 130-nm Digital CMOS Process

TL;DR: A 60-dB gain bulk-driven Miller OTA operating at 0.25-V power supply in the 130-nm digital CMOS process can help overcome some of the constraints imposed by nanometerCMOS process for high performance analog circuits in weak inversion region.
Journal ArticleDOI

Low-Voltage Bulk-Driven Operational Amplifier With Improved Transconductance

TL;DR: An operational amplifier is implemented with the proposed input stages and biasing circuits as its core building blocks and including a modified low-voltage class AB output amplifier to guarantee rail-to-rail output voltage range.
Journal ArticleDOI

An Ultra-Low-Voltage CMOS Process-Insensitive Self-Biased OTA With Rail-to-Rail Input Range

TL;DR: Using a novel self-biasing technique to bias the OTA obviates the need for extra biasing circuitry and enhances the performance and design feasibility under ultra-low-voltage conditions.
Proceedings ArticleDOI

A 60-dB Gain OTA operating at 0.25-V power supply in 130-nm digital CMOS process

TL;DR: A 60-dB gain bulk-driven Miller OTA operating at 0.25-V power supply in the 130-nm digital CMOS process can help overcome some of the constraints imposed by nanometerCMOS process for high performance analog circuits in weak inversion region.