A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector
Hyundai Park,Ying-Hao Kuo,Alexander W. Fang,Richard Jones,Oded Cohen,Mario J. Paniccia,John E. Bowers +6 more
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TLDR
The integrated device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s and is tapered to increase coupling efficiency and to minimize reflections.Abstract:
We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.read more
Citations
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Journal ArticleDOI
A Review on Organic–Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics
TL;DR: The focus is specifically on the critical understanding of materials synthesis, design, and engineering for the next-stage development of perovskite photodetectors and highlighting the current challenges in the field, which need to be further studied in the future.
Journal ArticleDOI
Hybrid Silicon Photonic Integrated Circuit Technology
Martijn J. R. Heck,Jared F. Bauters,Michael L. Davenport,Jonathan K. Doylend,Siddharth Jain,Geza Kurczveil,Sudharsanan Srinivasan,Yongbo Tang,John E. Bowers +8 more
TL;DR: In this paper, the current status of the hybrid silicon photonic integration platform with emphasis on its prospects for increased integration complexity is reviewed, and it is shown that this platform is well positioned and holds great potential to address future needs for medium-scale photonic integrated circuits.
Proceedings Article
Distributed Feedback Silicon Evanescent Laser
TL;DR: In this article, an electrically pumped distributed feedback silicon evanescent laser was reported, which operates continuous wave with a single mode output at 1600 nm, with a maximum output power of 5.4 mW and a maximum operating temperature of 50 °C.
Journal ArticleDOI
Hybrid Silicon Photonics for Optical Interconnects
Martijn J. R. Heck,Hui-Wen Chen,Alexander W. Fang,Brian R. Koch,Di Liang,Hyundai Park,Matthew N. Sysak,John E. Bowers +7 more
TL;DR: In this paper, a III/V layer is bonded to a fully processed silicon-on-insulator wafer, and a complete high-speed optical interconnect can be realized on-chip.
Journal ArticleDOI
A distributed feedback silicon evanescent laser
TL;DR: An electrically pumped distributed feedback silicon evanescent laser that operates continuous wave with a single mode output at 1600 nm with maximum output power of 5.4 mW is reported.
References
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A hybrid AlGaInAs-silicon evanescent waveguide photodetector.
Hyundai Park,Alexander W. Fang,Richard Jones,Oded Cohen,Omri Raday,Matthew N. Sysak,Mario J. Paniccia,John E. Bowers +7 more
TL;DR: A waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide that has a fiber coupled responsivity of 0.31 A/W and an internal quantum efficiency over the 1.5 mum wavelength range.
Journal ArticleDOI
CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band
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