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Proceedings ArticleDOI

20 GHz CMOS injection-locked frequency divider with variable division ratio

TLDR
In this article, an injection-locked frequency divider with variable division ratio, controlled by the input offset voltage, was realized using a 0.13 /spl mu/m CMOS technology.
Abstract
An injection-locked frequency divider (ILFD) with variable division ratio, controlled by the input offset voltage, was realized using a 0.13 /spl mu/m CMOS technology. In this report, the controllable division ratios were made from 2 up to 16 with an input AC signal of 10 GHz, by changing the input DC offset voltages. This divider also performs division ratios of 2, 4, 6 and 8 with a wide-locking range up to 20 GHz at 2.5 GHz self-oscillation. The DC supplied voltage of this circuit is only 2 V and the dividing capability can reach 20 GHz.

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Citations
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Proceedings ArticleDOI

A 40-GHz Frequency Divider in 90-nm CMOS Technology

TL;DR: In this article, a high-speed wideband frequency divider is presented, which is formed with a low voltage swing current mode logic (CML) structure, which enables high frequency operation at very low power dissipation.
Journal ArticleDOI

A Fully Differential Low-Power Divide-by-8 Injection-Locked Frequency Divider Up to 18 GHz

TL;DR: The proposed fully differential frequency divider presents wider locking range with the center frequency independent of injection amplitude, and has higher operating frequency and lower power dissipation compared with conventional static frequency dividers.
Journal ArticleDOI

An Injection-Locked Frequency Divider With Multiple Highly Nonlinear Injection Stages and Large Division Ratios

TL;DR: An injection-locked frequency divider with multiple highly nonlinear injection stages is discussed and measurement shows that multiple division ratios from 6 to 18 are achieved while the locking ranges are all above 1.7 GHz without the need for additional tuning.
Journal ArticleDOI

A Current-Reused Injection-Locked Frequency Multiplication/Division Circuit in 40-nm CMOS

TL;DR: A current-reused injection-locked frequency multiplication/division circuit is presented and a harmonic peaking technique and measured locking ranges of the multiplier and divider are presented.
Proceedings ArticleDOI

A 3 μW, 400 MHz divide-by-5 injection-locked frequency divider with 56% lock range in 90nm CMOS

TL;DR: In this paper, an ultra-low power injection locked frequency divider (ILFD) is presented and demonstrated based on a 5-stage single-ended ring oscillator, which achieves a lock range of 56% at a division ratio of 5 in the medical implant communications service (MICS) and the 433 MHz ISM frequency bands.
References
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Journal ArticleDOI

Superharmonic injection-locked frequency dividers

TL;DR: In this article, a first-order differential equation is derived for the noise dynamics of injection-locked oscillators, and a single-ended ILFD is designed in a 0.5-/spl mu/m CMOS technology operating at 1.8 GHz with more than 190 MHz locking range while consuming 3 mW of power.
Journal ArticleDOI

A unified model for injection-locked frequency dividers

TL;DR: In this article, the treatment of injection-locked frequency dividers (ILFDs) and regenerative systems is described, and the utility of the model is demonstrated in the calculation of both the steady-state and dynamic properties of ILFD systems, and subsequent computation of the corresponding phase noise spectrum.
Proceedings ArticleDOI

A 13.4-GHz CMOS frequency divider

TL;DR: In this article, the authors describe a 13.4 GHz 1/2-frequency divider fabricated in a partially-scaled 0.1 /spl mu/m bulk CMOS technology.
Proceedings ArticleDOI

A power-efficient 33 GHz 2:1 static frequency divider in 0.12-/spl mu/m SOI CMOS

TL;DR: In this paper, a 2:1 static frequency divider was fabricated in a 0.12-/spl mu/m SOI CMOS technology, and the divider exhibits a maximum operating frequency of 33 GHz.
Proceedings ArticleDOI

A wide-band CMOS injection-locked frequency divider

TL;DR: A novel inductorless injection-locked frequency divider that can make divisions with ratios 2,4,6 and 8 with wide locking ranges with a current of 3.8 mA is proposed.
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