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Proceedings ArticleDOI

A novel monolithic HEMT-HBT Ka-band VCO-mixer design

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TLDR
In this article, an all active HEMT-HBT VCO is constructed from the HBT of the cascode by providing a tunable active inductor-resonator, which can be tuned from 28.5 to 29.3 GHz while providing /spl ap/0 dBm of output power.
Abstract
Here we present a novel demonstration of a HEMT-HBT VCO-mixer which utilizes a unique active topology and is the first Ka-band MMIC demonstrated using GaAs HEMT-HBT IC technology. The MMIC integrates a novel HEMT-HBT cascode active mixer topology which operates similar to a dual-gate mixer. An all active HEMT-HBT VCO is constructed from the HBT of the cascode by providing a HEMT tunable active inductor-resonator. The VCO can be tuned from 28.5 to 29.3 GHz while providing /spl ap/0 dBm of output power. Operated as an upconverter, the HEMT-HBT VCO-mixer achieves 6-9 dB conversion-loss over a 31 to 39 GHz output frequency band. The compact MMIC is 1.44/spl times/0.76 mm/sup 2/ in area due to the use of novel active circuit topologies and relies on minimal use of passive matching. The novel miniature active RF IC techniques demonstrated here have direct implications for future high complexity HEMT-HBT millimeter-wave MMICs.

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Citations
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Journal ArticleDOI

Analytical evaluation of the MoM matrix elements for the capacitance of a charged plate

TL;DR: In this paper, a closed-form expression for the fourfold integral involved in the evaluation of the capacitance of a charged plate using the Galerkin's procedure in the method of moments is derived.
Journal ArticleDOI

K Band SiGe HBT single ended active inductors

Jorge Alves Torres, +1 more
- 01 Jan 2016 - 
TL;DR: The internal parameters of small signal model of HBT were studied and the crucial parameter to enhance the negative resistance was identified and so the Q of the AI was identified.
Proceedings ArticleDOI

SiGe 30GHz active inductor based on cascode gyrator

J.A. Torres, +1 more
TL;DR: In this article, a monolithic active inductor was implemented with a SiGe technology with 4 metal layers and HBTs with fT=120 GHz. The inductance value can be as high as InH.
Journal ArticleDOI

A novel common-gate mixer for wireless applications

TL;DR: In this paper, a balanced 27 GHz common-gate downconvert mixer is presented, which allows 0.8 /spl mu/m MESFETs to be used at frequencies in excess of those practical for the common-source configuration.
Journal ArticleDOI

30 GHz SiGe active inductor with voltage controlled Q

TL;DR: An improved AI with the added resistor replaced by a voltage controlled mosfet resistor is proposed, which allows the variable AI quality factor fine tuning.
References
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Journal ArticleDOI

Lossless broad-band monolithic microwave active inductors

TL;DR: In this article, a lossless broadband microwave active inductor for general-purpose use in microwave circuits is proposed, and its characteristics are discussed, including low series resistance, low-loss characteristics, and a maximum Q factor of 65.
Journal ArticleDOI

Monolithic HEMT-HBT integration by selective MBE

TL;DR: In this paper, the authors achieved successful integration of high electron mobility transistors and heterojunction bipolar transistors in the same microwave circuit using selective molecular beam epitaxy and a novel merged processing technology.
Proceedings ArticleDOI

Lossless, broadband monolithic microwave active inductors

TL;DR: In this paper, lossless, broadband microwave active inductors are proposed for general-purpose use in microwave circuits, which operate in a wide frequency range with very low series resistance.
Journal ArticleDOI

A novel heterojunction bipolar transistor VCO using an active tunable inductance

TL;DR: In this paper, a bias-tunable active inductance-controlled HBT voltage-controlled oscillator (VCO) was demonstrated at both 4 and 10 GHz with the same output power and phase noise at 100 kHz offset from the carrier.
Journal ArticleDOI

A novel monolithic HEMT LNA integrating HBT-tunable active-feedback linearization by selective MBE

TL;DR: In this paper, a heterojunction bipolar transistor (HBT) active feedback was employed with a HEMT low noise amplifier (LNA) to improve the linearity or third-order intercept point (IP3) and gain-bandwidth performance without significantly impacting noise figure.
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