Journal ArticleDOI
A room-temperature near-infrared photodetector based on a MoS2/CdTe p-n heterojunction with a broadband response up to 1700 nm
Yuange Wang,Xiaowen Huang,Di Wu,Ranran Zhuo,Enping Wu,Cheng Jia,Zhifeng Shi,Tingting Xu,Yongtao Tian,Xinjian Li +9 more
TLDR
In this article, a high-performance infrared photodetectors based on a MoS2/CdTe p-n heterojunction with type-II band alignment was constructed and investigated.Abstract:
High-performance infrared photodetectors (PDs) have attracted much attention due to their great significance in military and industrial applications. The improvement of two-dimensional (2D) materials offers an open platform for designing various high-performance PDs, especially in the infrared region, which can overcome the drawbacks of the traditional epitaxial thin film based PDs, such as the complicated preparation processes, low-temperature operating conditions and inability to be miniaturized. In this work, a high-performance infrared PD based on a MoS2/CdTe p–n heterojunction with type-II band alignment was constructed and investigated. This PD showed a broadband photoresponse from 200 nm to 1700 nm, which is far beyond the band-gaps of MoS2 and CdTe. Moreover, a high responsivity, specific detectivity and fast response speed were achieved. These results demonstrate that the MoS2/CdTe p–n heterojunction has great potential in room-temperature infrared detection, and provide a way to design high-performance infrared PDs for other 2D materials.read more
Citations
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Journal ArticleDOI
In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared
Enping Wu,Di Wu,Cheng Jia,Yuange Wang,Huiyu Yuan,Longhui Zeng,Tingting Xu,Zhifeng Shi,Yongtao Tian,Xinjian Li +9 more
TL;DR: In this paper, a 2D WS2/Si heterojunction with a type-II band alignment was formed in situ, which produced a high Ion/Ioff ratio over 10,6 responsivity of 224 mA/W, specific detectivity of 1.5 × 1012 Jones, high polarization sensitivity, and broadband response up to 3043 nm.
Journal ArticleDOI
Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation.
Di Wu,Jiawen Guo,Chaoqiang Wang,Xiaoyan Ren,Yongsheng Chen,Pei Lin,Longhui Zeng,Zhifeng Shi,Xinjian Li,Chongxin Shan,Jiansheng Jie,Jiansheng Jie +11 more
TL;DR: In this article, an ultrabroadband two-dimensional tungsten disulfide (WS2) heterojunction photodetector is presented, where the defect engineering and interface passivation are performed.
Journal ArticleDOI
A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction
Ranran Zhuo,Di Wu,Yuange Wang,Enping Wu,Cheng Jia,Zhifeng Shi,Tingting Xu,Yongtao Tian,Xinjian Li +8 more
TL;DR: In this article, a self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction was demonstrated, which exhibits a remarkable rectifying characteristic with a rectification ratio over 105 and excellent solar blind photoresponse properties with a cut-off wavelength of 260 nm and a high rejection ratio of 1.6 × 103.
Journal ArticleDOI
Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing
Di Wu,Cheng Jia,Fenghua Shi,Longhui Zeng,Pei Lin,Lin Dong,Zhifeng Shi,Yongtao Tian,Xinjian Li,Jiansheng Jie +9 more
TL;DR: In this paper, a self-driven, highly polarization-sensitive, broadband photovoltaic detector based on a PdSe2/Si nanowire array (SiNWA) heterostructure was developed for the first time.
Journal ArticleDOI
Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition
TL;DR: In this article, the authors provide a comprehensive overview on the latest progress in pulsed-laser deposition of 2D layered materials (2DLMs), and its application in photoelectric detection.
References
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