Journal ArticleDOI
A theory of transistor cutoff frequency (f T ) falloff at high current densities
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In this paper, it was shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities.Abstract:
It is shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities. The base layer spreading mechanism derives from an analysis of the effect of the current-dependent buildup of the mobile-carrier space-charge density in the collector transition layer. Calculations show that at sufficiently high collector current levels, the mobile space-charge density in the collector transition layer cannot be considered negligible in comparison to the fixed charge density of that region. The over-all effect of taking the mobile space charge into account in analyzing the collector transition region is that, at high current densities, the transition region boundary adjacent to the neutral base layer is displaced toward the collector metal contact with increasing collector current. The attendant widening of the neutral base layer results in the observed, high-current falloff in f T . The application of this theory to transistor structures of both the alloy and mesa variety yields, in each case, calculated curves of f T vs I c which are in reasonably good agreement with experiment.read more
Citations
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Journal ArticleDOI
Characteristics of the Vertical Magnetotransistor for Integration
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Bipolar and Junction Field-Effect Transistors
Badih El-Kareh,Lou N. Hutter +1 more
TL;DR: This chapter begins with a review of BJT types, operation, and characteristics that are relevant to analog applications, followed by a description of JFET types, basic operation,and characteristics and concludes with simple circuit applications of both transistors.
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Development and integration of silicon-germanium front-end electronics for active phased-array antennas
Proceedings ArticleDOI
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References
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Journal ArticleDOI
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Journal ArticleDOI
Structure-Determined Gain-Band Product of Junction Triode Transistors
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