Journal ArticleDOI
A theory of transistor cutoff frequency (f T ) falloff at high current densities
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In this paper, it was shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities.Abstract:
It is shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities. The base layer spreading mechanism derives from an analysis of the effect of the current-dependent buildup of the mobile-carrier space-charge density in the collector transition layer. Calculations show that at sufficiently high collector current levels, the mobile space-charge density in the collector transition layer cannot be considered negligible in comparison to the fixed charge density of that region. The over-all effect of taking the mobile space charge into account in analyzing the collector transition region is that, at high current densities, the transition region boundary adjacent to the neutral base layer is displaced toward the collector metal contact with increasing collector current. The attendant widening of the neutral base layer results in the observed, high-current falloff in f T . The application of this theory to transistor structures of both the alloy and mesa variety yields, in each case, calculated curves of f T vs I c which are in reasonably good agreement with experiment.read more
Citations
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Journal ArticleDOI
Physics-based large-signal heterojunction bipolar transistor model for circuit simulation
J.J. Liou,J.S. Yuan +1 more
TL;DR: In this paper, a comprehensive single heterojunction bipolar transistor (HBT) model suited for circuit simulation is presented, which adds important heterostructure device physics as well as physical properties of 3 or 4 compound materials such as AlGaAs and GaAs.
Proceedings ArticleDOI
InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model
Sylvain Blayac,Muriel Riet,J.L. Benchimol,M. Abboun,Frédéric Aniel,P. Berdaguer,A.M. Duchenois,Agnieszka Konczykowska,Jean Godin +8 more
TL;DR: In this paper, the InP/InGaAs DHBT technology for 40 Gb/s ICs was presented and a geometric model based on a set of analytical equations was used for device geometry optimization.
Journal ArticleDOI
Transit time of fast bipolar transistors at high collector-current densities
TL;DR: In this article, a physical description of the forward transit time τf in fast bipolar transistors at high collector-current densities using only physical parameters is presented. But the model is restricted to the case of Si n-p-n transistors.
Journal ArticleDOI
Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS
TL;DR: In this article, an electrical safe operating area analysis of a robust p-channel lateral DMOS transistor is performed, and the dependence of the trigger voltage on the length of channel and drift regions is analyzed, and tradeoff with the specific on-resistance (RDSon) is given.
Journal ArticleDOI
The interdependence between the collapse phenomenon and the avalanche breakdown in AlGaAs/GaAs power heterojunction bipolar transistors
TL;DR: In this paper, a theoretical analysis of the interaction between the collapse and carrier ionization multiplication in the collector was presented, and it was shown that the previous qualitative description of the interdependence of collapse and the avalanche breakdown, while being mostly accurate, requires modification.
References
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Journal ArticleDOI
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Journal ArticleDOI
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Journal ArticleDOI
The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
J. L. Moll,I. M. Ross +1 more
TL;DR: In this article, a method of analyzing transistor behavior for any base-layer impurity distribution is presented, in particular expressions for emitter efficiency, transverse sheet resistance R, transit time, and frequency cut-off f?.
Journal ArticleDOI
Structure-Determined Gain-Band Product of Junction Triode Transistors
TL;DR: In this article, the authors compared the power gain of the junction triode with those of the field effect transistor and the analog transistor and showed that the gain-band product is nearly independent of the particular alpha cutoff frequency selected.