Journal ArticleDOI
A theory of transistor cutoff frequency (f T ) falloff at high current densities
TLDR
In this paper, it was shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities.Abstract:
It is shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities. The base layer spreading mechanism derives from an analysis of the effect of the current-dependent buildup of the mobile-carrier space-charge density in the collector transition layer. Calculations show that at sufficiently high collector current levels, the mobile space-charge density in the collector transition layer cannot be considered negligible in comparison to the fixed charge density of that region. The over-all effect of taking the mobile space charge into account in analyzing the collector transition region is that, at high current densities, the transition region boundary adjacent to the neutral base layer is displaced toward the collector metal contact with increasing collector current. The attendant widening of the neutral base layer results in the observed, high-current falloff in f T . The application of this theory to transistor structures of both the alloy and mesa variety yields, in each case, calculated curves of f T vs I c which are in reasonably good agreement with experiment.read more
Citations
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Proceedings ArticleDOI
High injection region analysis and optimization of power transistors
TL;DR: In this paper, a model of base widening and the associated inverse mode base conductivity modulation is proposed, and expressions for saturated current gain (hFE) and cutoff frequency (fT) in double-diffused transistors for exponential, Gaussian, and erfc base impurity profiles are also given.
Journal ArticleDOI
On the base region minority carrier concentration in narrow-base transistors
P.J. McCleer,G.I. Haddad +1 more
TL;DR: An empirical current and voltage-dependent boundary condition for the minority carrier concentration at the base edge of the collector-base depletion layer in a one-dimensional narrow-base transistor structure is presented in this paper.
Journal ArticleDOI
Current-voltage characteristics of bipolar transistors including quasi-saturation, finite collector lifetime, and high-low junction effects
TL;DR: In this article, a physics-based and compact model is developed to predict the bipolar transistor DC characteristics covering all saturation, quasi-saturation, and active operations, and the currentvoltage characteristics predicted by the present model compare favourably with that obtained from measurements and simulations reported in the literature.
DissertationDOI
Design and performance of a broadband microwave active inductor circuit with an application to amplifier design
TL;DR: In this paper, the authors propose a novel approach to deal with the problem of plagiarism in advertising: https://www.salvation-salvation.com/salvation/
Proceedings ArticleDOI
Testing the impact of process defects on ECL power-delay performance
TL;DR: The delay equation provides the insight into the sensitivity of various process defects in ECL gate delay and can be generalized to digital circuits other than ECL logic.
References
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TL;DR: In this article, a method of analyzing transistor behavior for any base-layer impurity distribution is presented, in particular expressions for emitter efficiency, transverse sheet resistance R, transit time, and frequency cut-off f?.
Journal ArticleDOI
Structure-Determined Gain-Band Product of Junction Triode Transistors
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