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Journal ArticleDOI

Ab Initio Study of Electronic and Magnetic Properties of Ga1-xCoxN (Doped) and Ga1-x-yCoxCryN (Co-doped)

TLDR
Using the Korring-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA) as mentioned in this paper, the electronic structure and magnetic properties of the doped and co-doped materials with single and double impurities were analyzed.
Abstract
Using the Korring–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA) we study the electronic structure and magnetic properties of the doped and co-doped of Ga1-x Co x N and Ga1-x-y Co x Cr y N materials with single and double impurities, respectively. The total and local density of state (DOS) in two systems are obtained We investigate the effect of the different values of dilution in Ga1-x Co x N and Ga1-x-y Co x Cr y N. On the other hand, the magnetic moment and the gap energies are deduced for different values of concentrations.

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Citations
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Journal ArticleDOI

(V, Ti) co-doping effect on electronic and magnetic properties of zb-AlAs

TL;DR: In this article, the ab initio study of electronic, magnetic properties and Curie temperature of AlAs doped by single and double impurities using LDA-KKR-CPA method was performed.
Journal ArticleDOI

First-principles calculations for studying effect of Tellurium (Te) doping on electronic properties, half-metallic ferromagnetism and “Curie temperature of V-doped AlSb DMS compound

TL;DR: In this article, the electronic structure and magnetic features of intrinsic Al1-xVxSb, AlSb1-yTey and Al 1-x VxSBS, Al SBS and AlSBS diluted magnetic semiconductors (DMSs) compounds at various doping concentrations of x and y have been calculated using Korringa-Kohn-Rostoker coherent-potential approximation (KKR-CPA), using a coupling local density-functional approximation (LDA).
Journal ArticleDOI

Ab Initio Study of Electronic and Magnetic Properties in ZnO-Doped and Co-doped by Vanadium and Silver

TL;DR: In this paper, the electronic and magnetic properties of Zn1−x====== M�₷Ⴗ ₷ ǫ (M = Ag or V) and Zn 1−x−y====== A====== B====== Ãի (A = V; B = Ag) were investigated using the Korringa-Kohn-Rostoker (KKR) method coupled with the coherent potential approximation (CPA).
Journal ArticleDOI

Spectroscopic ellipsometry study of Mn doped CeO2 thin films prepared by radio-frequency magnetron sputtering

Shenghong Yang, +1 more
- 01 Oct 2022 - 
TL;DR: In this paper , the influence of Mn doped content on the optical properties was studied by spectroscopic ellipsometry (SE) in the UV-NIR region (210∼2500 nm), and the energy dispersion optical constants (the refractive index n and the extinction coefficient k) of Ce1-xMnxO2 thin films were obtained by analyzing the SE spectra.
References
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Journal ArticleDOI

Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysis

TL;DR: The authors assess various approximate forms for the correlation energy per particle of the spin-polarized homogeneous electron gas that have frequently been used in applications of the local spin density a...
Journal ArticleDOI

Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Journal ArticleDOI

Room temperature ferromagnetic properties of (Ga, Mn)N

TL;DR: In this paper, the Curie temperature of Mn-doped GaN films has been obtained by varying the growth and annealing conditions of the GaN and they have been shown to have ferromagnetic behavior with hysteresis curves showing a coercivity of 100−500 Oe.
Journal ArticleDOI

Magnetic properties of n-GaMnN thin films

TL;DR: In this paper, a GaMnN thin film was synthesized using gas-source molecular-beam epitaxy and magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples.
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