Journal ArticleDOI
Ab Initio Study of Electronic and Magnetic Properties of Ga1-xCoxN (Doped) and Ga1-x-yCoxCryN (Co-doped)
TLDR
Using the Korring-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA) as mentioned in this paper, the electronic structure and magnetic properties of the doped and co-doped materials with single and double impurities were analyzed.Abstract:
Using the Korring–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA) we study the electronic structure and magnetic properties of the doped and co-doped of Ga1-x
Co
x
N and Ga1-x-y
Co
x
Cr
y
N materials with single and double impurities, respectively. The total and local density of state (DOS) in two systems are obtained We investigate the effect of the different values of dilution in Ga1-x
Co
x
N and Ga1-x-y
Co
x
Cr
y
N. On the other hand, the magnetic moment and the gap energies are deduced for different values of concentrations.read more
Citations
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(V, Ti) co-doping effect on electronic and magnetic properties of zb-AlAs
TL;DR: In this article, the ab initio study of electronic, magnetic properties and Curie temperature of AlAs doped by single and double impurities using LDA-KKR-CPA method was performed.
Journal ArticleDOI
First-principles calculations for studying effect of Tellurium (Te) doping on electronic properties, half-metallic ferromagnetism and “Curie temperature of V-doped AlSb DMS compound
TL;DR: In this article, the electronic structure and magnetic features of intrinsic Al1-xVxSb, AlSb1-yTey and Al 1-x VxSBS, Al SBS and AlSBS diluted magnetic semiconductors (DMSs) compounds at various doping concentrations of x and y have been calculated using Korringa-Kohn-Rostoker coherent-potential approximation (KKR-CPA), using a coupling local density-functional approximation (LDA).
Journal ArticleDOI
Ab Initio Study of Electronic and Magnetic Properties in ZnO-Doped and Co-doped by Vanadium and Silver
TL;DR: In this paper, the electronic and magnetic properties of Zn1−x====== M�₷Ⴗ ₷ ǫ (M = Ag or V) and Zn 1−x−y====== A====== B====== Ãի (A = V; B = Ag) were investigated using the Korringa-Kohn-Rostoker (KKR) method coupled with the coherent potential approximation (CPA).
Journal ArticleDOI
Spectroscopic ellipsometry study of Mn doped CeO2 thin films prepared by radio-frequency magnetron sputtering
Shenghong Yang,Yueli Zhang +1 more
TL;DR: In this paper , the influence of Mn doped content on the optical properties was studied by spectroscopic ellipsometry (SE) in the UV-NIR region (210∼2500 nm), and the energy dispersion optical constants (the refractive index n and the extinction coefficient k) of Ce1-xMnxO2 thin films were obtained by analyzing the SE spectra.
References
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Journal ArticleDOI
Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysis
TL;DR: The authors assess various approximate forms for the correlation energy per particle of the spin-polarized homogeneous electron gas that have frequently been used in applications of the local spin density a...
Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Journal ArticleDOI
Room temperature ferromagnetic properties of (Ga, Mn)N
M. L. Reed,Nadia A. El-Masry,Hans H. Stadelmaier,M. K. Ritums,M. J. Reed,C. A. Parker,John C. Roberts,Salah M. Bedair +7 more
TL;DR: In this paper, the Curie temperature of Mn-doped GaN films has been obtained by varying the growth and annealing conditions of the GaN and they have been shown to have ferromagnetic behavior with hysteresis curves showing a coercivity of 100−500 Oe.
Journal ArticleDOI
Magnetic properties of n-GaMnN thin films
G. T. Thaler,M. E. Overberg,Brent P. Gila,R. M. Frazier,Cammy R. Abernathy,Stephen J. Pearton,Ju-Wan Lee,Sang-Bum Lee,Yun Daniel Park,Z. G. Khim,Jihyun Kim,Fan Ren +11 more
TL;DR: In this paper, a GaMnN thin film was synthesized using gas-source molecular-beam epitaxy and magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples.