Journal ArticleDOI
An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction
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TLDR
In this article, a dual junction solar cell with conversion efficiency of 43.603% was proposed, where the tunnel diode, window layer and back surface field (BSF) layer of the cell were optimized to achieve higher conversion efficiency.About:
This article is published in Superlattices and Microstructures.The article was published on 2016-07-01. It has received 22 citations till now. The article focuses on the topics: Quantum efficiency & Solar cell efficiency.read more
Citations
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Journal ArticleDOI
Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers
TL;DR: In this article, the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (inGaP/GaAs) inorganic solar cells were investigated.
Journal ArticleDOI
Effective use of spectrum by an ARC less dual junction solar cell to achieve higher efficiency: A simulation study
TL;DR: A highly efficient (>40%) ARC less dual junction solar cell with low band gap GaSb was designed in this paper, where the authors showed an enhancement of 79% in its performance as compared to other reports.
Journal ArticleDOI
Use of InGaAs/GaSb Quantum Ratchet in p-i-n GaAs Solar Cell for Voltage Preservation and Higher Conversion Efficiency
TL;DR: In this article, an antimonide-based quantum photon ratchet SC is proposed, where an InGaAs/GaSb quantum ratchet band is introduced into the IBSC.
Journal ArticleDOI
Use of ratchet band in a quantum dot embedded intermediate band solar cell to enrich the photo response
TL;DR: In this article, a single junction quantum dot (QD) solar cell is proposed by introducing a ratchet band (RB), and the validation of carrier life time enhancement is provided through the study of spectral response (SR), external quantum efficiency (EQE), and internal quantum efficiency of the cell.
Journal ArticleDOI
Improving the performance of a multi-junction solar cell by optimizing BSF, base and emitter layers
Hamid Reza Arzbin,Abbas Ghadimi +1 more
TL;DR: In this paper, AlGaAs have been used instead of GaAs in emitter layer with reduction in thicknesses of the base in order to decrease the recombination rate and increase the efficiency of the proposed solar cell.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Handbook of photovoltaic science and engineering
Antonio Luque,Steven Hegedus +1 more
TL;DR: In this article, the role of policy in PV Industry Growth: Past, Present and Future (John Byrne and Lado Kurdgelashvili) is discussed, as well as future cell and array possibilities.
Journal ArticleDOI
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
J. F. Geisz,Daniel J. Friedman,J.S. Ward,Anna Duda,Waldo J. Olavarria,Tom Moriarty,J. Kiehl,Manuel J. Romero,Andrew G. Norman,Kim M. Jones +9 more
TL;DR: In this paper, a photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency.