Journal ArticleDOI
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy
S. Strite,J. Ruan,Zhuo Li,Arnel Salvador,Haydn Chen,David J. Smith,W. J. Choyke,Hadis Morkoç +7 more
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TLDR
In this article, the bulk properties of cubic GaN/GaAs were investigated by cathodoluminescence, which revealed a broad midgap peak as well as several sharp emission peaks just below the expected band gap.Abstract:
We present the first comprehensive investigation of the bulk properties, both optical and structural, of cubic GaN as grown by plasma‐assisted molecular‐beam epitaxy on vicinal (100) GaAs substrates. X‐ray measurements determined the crystal structure of GaN/GaAs to be cubic with a lattice constant of 4.5 A. High resolution transmission electron microscopy revealed a high density of planar defects propagating along the GaN {111} planes. The majority of the defects originated from disordered regions at the GaN/GaAs interface. The optical properties of the films were investigated by cathodoluminescence which revealed a broad midgap peak as well as several sharp emission peaks just below the expected band gap. The data imply that the room temperature band gap of cubic GaN is approximately 3.45 eV.read more
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
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Luminescence properties of defects in GaN
TL;DR: In this paper, the structural and point defects caused by lattice and stacking mismatch with substrates are discussed. But even the best of the three binaries, InN, AIN and AIN as well as their ternary compounds, contain many structural defects, and these defects notably affect the electrical and optical properties of the host material.
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Substrates for gallium nitride epitaxy
L. Liu,James H. Edgar +1 more
TL;DR: In this paper, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed.