Journal ArticleDOI
Analysis of CNTFETs Operating in SubThreshold Region for Low Power Digital Applications
Roberto Marani,Anna Gina Perri +1 more
Reads0
Chats0
About:
This article is published in ECS Journal of Solid State Science and Technology.The article was published on 2016-01-01. It has received 38 citations till now. The article focuses on the topics: Subthreshold conduction.read more
Citations
More filters
Journal ArticleDOI
A Simulation Study of Analogue and Logic Circuits with CNTFETs
Roberto Marani,Anna Gina Perri +1 more
Journal ArticleDOI
A Comparison of CNTFET Models through the Design of a SRAM Cell
R. Marani,Anna Gina Perri +1 more
Journal ArticleDOI
Effects of Temperature in CNTFET-Based Design of Analog Circuits
References
More filters
Journal ArticleDOI
Energy band-gap engineering of graphene nanoribbons.
TL;DR: It is found that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
Journal ArticleDOI
Energy Gaps in Graphene Nanoribbons
TL;DR: The authors' ab initio calculations show that the origin of energy gaps for GNRs with armchair shaped edges arises from both quantum confinement and the crucial effect of the edges, which differs from the results of simple tight-binding calculations or solutions of the Dirac's equation based on them.
Journal ArticleDOI
Carbon nanotubes as schottky barrier transistors.
TL;DR: In this paper, the authors show that carbon nanotube transistors operate as unconventional Schottky barrier transistors, in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance.
Carbon Nanotubes as Schottky Barrier Transistors
TL;DR: It is shown that carbon nanotube transistors operate as unconventional "Schottky barrier transistors," in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance.
Journal ArticleDOI
Field-modulated carrier transport in carbon nanotube transistors.
Joerg Appenzeller,Joachim Knoch,Vincent Derycke,Richard Martel,Shalom J. Wind,Phaedon Avouris +5 more
TL;DR: The experiments show that the bulk properties of the semiconducting carbon nanotubes do not limit the current flow through the metal/nanotube/metal system and can be understood in the framework of gate and source-drain field induced modulation of the nanotube band structure at the source contact.
Related Papers (5)
A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors Oriented to Simulation Software
Roberto Marani,Anna Gina Perri +1 more