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A Simulation Study of Analogue and Logic Circuits with CNTFETs
Roberto Marani,Anna Gina Perri +1 more
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This article is published in ECS Journal of Solid State Science and Technology.The article was published on 2016-01-01. It has received 40 citations till now.read more
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Performance analysis and enhancement of 10-nm GAA CNTFET-based circuits in the presence of CNT-metal contact resistance
TL;DR: In this article, an effective circuit-level solution for improving the performance of gate-all-around (GAA) CNTFET-based circuits in the presence of contact resistance is proposed.
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A Comparison of CNTFET Models through the Design of a SRAM Cell
R. Marani,Anna Gina Perri +1 more
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Effects of Temperature in CNTFET-Based Design of Analog Circuits
References
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Journal ArticleDOI
High-κ dielectrics for advanced carbon- nanotube transistors and logic gates
Ali Javey,Hyoungsub Kim,Markus Brink,Qian Wang,Ant Ural,Jing Guo,Paul C. McIntyre,Paul L. McEuen,Mark Lundstrom,Hongjie Dai +9 more
TL;DR: In this article, high-kappa (approximately 25) zirconium oxide thin-films (approximately 8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field effect transistors.
High dielectrics for advanced carbon nanotube transistors and logic
A Javey,Hyoungsub Kim,M Brink +2 more
Journal ArticleDOI
A circuit-compatible model of ballistic carbon nanotube field-effect transistors
TL;DR: A novel method of circuit-compatible modeling of single-walled semiconducting CNFETs in their ultimate performance limit is presented, for the first time, both the I-V and the C-V characteristics of the device have been efficiently modeled for circuit simulations.
Journal ArticleDOI
A Semiempirical SPICE Model for n-Type Conventional CNTFETs
TL;DR: In this article, a semi-empirical model of carbon nanotube field effect transistor is presented, based on analytical approximations and parameters extracted from quantum mechanical simulations, having compared the results with those of the numerical model available and of experimental data.
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A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors Oriented to Simulation Software
Roberto Marani,Anna Gina Perri +1 more