Proceedings ArticleDOI
Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects
Hajime Aoyama,Yuusuke Tanaka,Kazuo Tawarayama,Naofumi Nakamura,Eiichi Soda,Noriaki Oda,Yukiyasu Arisawa,Taiga Uno,Takashi Kamo,Kentaro Matsunaga,Daisuke Kawamura,Toshihiko Tanaka,Hiroyuki Tanaka,Shuichi Saito,Ichiro Mori +14 more
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TLDR
In this article, the authors describe the applicability of EUVL to the fabrication of back-end-of-line (BEOL) test chips with a feature size of hp 35672nm, which corresponds to the 19-nm logic node.Abstract:
Extreme ultraviolet lithography (EUVL) is moving into the phase of the evaluation of integration for device fabrication.
This paper describes its applicability to the fabrication of back-end-of-line (BEOL) test chips with a feature size of hp 35
nm, which corresponds to the 19-nm logic node. The chips were used to evaluate two-level dual damascene
interconnects made with low-k film and Cu. The key factors needed for successful fabrication are a durable multi-stack
resist process, accurate critical dimension (CD) control, and usable overlay accuracy for the lithography process. A
multi-stack resist process employing 70-nm-thick resist and 25-nm-thick SOG was used on the Metal-1 (M1) and Metal-
2 (M2) layers. The resist thickness for the Via-1 (V1) layer was 80 nm. To obtain an accurate CD, we employed rulebased
corrections involving mask CD bias to compensate for flare variation, mask shadowing effects, and optical
proximity effects. With these corrections, the CD variation for various 35-nm trench and via patterns was about ± 1 nm.
The total overlay accuracy (|mean| ± 3σ) for V1 to M1 and M2 to V1 was below 12 nm. Electrical tests indicate that the
uses of Ru barrier metal and scalable porous silica are keys to obtaining operational devices. The evaluation of a BEOL
test chip revealed that EUVL is applicable to the fabrication of hp-35-nm interconnects and that device development can be accelerated.read more
Citations
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Proceedings ArticleDOI
Development status of EUV resist materials and processing at Selete
Kentaro Matsunaga,Gousuke Shiraishi,Julius Joseph Santillian,Koji Kaneyama,Hiroaki Oizumi,Toshiro Itani +5 more
TL;DR: In this article, the Selete standard resist (SSR6 and SSR7) were evaluated for the feasibility of the Extreme ultraviolet (EUV) lithography process for manufacturing semiconductor devices.
Proceedings ArticleDOI
EUV flare and proximity modeling and model-based correction
Christian Zuniga,Mohamed Habib,James Word,Gian Lorusso,Eric Hendrickx,Burak Baylav,Raghu Chalasani,Michael Lam +7 more
TL;DR: In this article, the benefits and tradeoffs associated with hybrid OPC approaches which mix both rules-based and model-based OPC methods are discussed, including correction time, accuracy, and data volume.
Proceedings ArticleDOI
Simultaneous flare level and flare variation minimization with dummification in EUVL
Shao-Yun Fang,Yao-Wen Chang +1 more
TL;DR: Experimental results show that the flow can effectively and efficiently reduce the flare level and the flare variation, which may contribute to the better control of critical dimension (CD) uniformity.
Journal ArticleDOI
Observation of phase defect on extreme ultraviolet mask using an extreme ultraviolet microscope
Tsuyoshi Amano,Tsuneo Terasawa,Hidehiro Watanabe,Mitsunori Toyoda,Tetsuo Harada,Takeo Watanabe,Hiroo Kinoshita +6 more
TL;DR: In this article, the authors examined the influence of phase defect structures on extreme ultraviolet (EUV) microscope images and found that phase defects on the bottom of a multilayer (ML) do not always propagate vertically upward to the ML's top surface.
Journal ArticleDOI
Phase defect detection signal analysis: dependence of defect size variation
TL;DR: In this paper, the authors examined the measurement repeatability of the phase defect volume using SPM and the influence of the defect volume distribution on defect detection signal intensity (DSI) using an at-wavelength dark field defect inspection tool.
References
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Proceedings ArticleDOI
Integration of EUV lithography in the fabrication of 22-nm node devices
Obert R. Wood,Chiew-seng Koay,Karen Petrillo,Hiroyuki Mizuno,Sudhar Raghunathan,John C. Arnold,D. Horak,Martin Burkhardt,Gregory McIntyre,Yunfei Deng,Bruno La Fontaine,Uzodinma Okoroanyanwu,Anna Tchikoulaeva,Tom Wallow,Chen Jim C,Matthew E. Colburn,S. Fan,Bala S. Haran,Yunpeng Yin +18 more
TL;DR: In this paper, a full-field EUV mask was designed for contact and first interconnect layers using rule-based corrections to compensate for the effects of mask shadowing and imaging system flare.
Proceedings ArticleDOI
Impact of EUV light scatter on CD control as a result of mask density changes
TL;DR: In this paper, the impact of flare on critical dimension (CD) control for masks exhibiting Cr density changes that result in cross-field flare variation was investigated and it was shown that open field flare must be controlled to 11 percent for 30 nm isolated features and 6 percent for 20 nm isolated feature for an NA equals 0.25 system assuming a +/- 3 percent CD control budget allocated to flare.
Proceedings ArticleDOI
Nikon EUVL development progress summary
Takaharu Miura,Katsuhiko Murakami,Kazuaki Suzuki,Yoshiaki Kohama,Yukiharu Ohkubo,Takeshi Asami +5 more
TL;DR: Nikon as mentioned in this paper presented significant progress on the development of EUV exposure tool with recent encouraging data of mirror polishing accuracy and evaluation results of Nikon reticle protection concept, which is scheduled to be delivered in 1st half of 2007.
Journal ArticleDOI
Alternative developer solutions for extreme ultraviolet resist
TL;DR: In this article, the use of tetrapropylammonium hydroxide (TPAH) and tetrabutyammonium hydride (tBAH) aqueous developer solutions is proposed as an alternative to the TMAH developer solution (semiconductor industry standard).
Proceedings ArticleDOI
Development of resist material and process for hp-2x-nm devices using EUV lithography
Kentaro Matsunaga,Hiroaki Oizumi,Koji Kaneyama,Gousuke Shiraishi,Kazuyuki Matsumaro,Julius Joseph Santillan,Toshiro Itani +6 more
TL;DR: In this paper, the Selete standard resist 4 (SSR4) was reported to have better performance than SSR3 and SSR4, but the resist performance does not meet the stringent requirements for resolution limit, sensitivity, and line variance.