Journal ArticleDOI
Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
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TLDR
In this article, a thin film of elementary nickel was formed by atomic layer deposition (ALD), which consisted of two consecutive chemical reaction steps: an oxidizing step and a reducing step.Abstract:
A thin film of elementary nickel was formed by atomic layer deposition (ALD). The deposition cycle consisted of two consecutive chemical reaction steps: an oxidizing step and a reducing step. An atomic layer of nickel oxide was made by sequentially supplying bis(cyclopentadienyl)-nickel as a nickel precursor and water as an oxidation agent; the preformed atomic layer of nickel oxide was then reduced to elementary nickel metal by exposure to hydrogen radical at a deposition temperature of 165°C. Auger electron spectroscopy analysis detected negligible oxygen content in the grown films, indicating that the hydrogen radical had completely reduced the nickel oxide to a metallic thin film. In addition, carbon impurities in the film dropped from 16 atom % to less than 5 atom % during the reduction reaction. The proposed two-step ALD method for elementary metals was successful in forming continuous and conformal nickel thin films. These nickel films formed an effective glue layer between chemical vapor deposited copper and a diffusion barrier layer of TiN. The adhesion of a 1 μm thick copper film to a 15 nm thick nickel glue layer over a TiN barrier film was excellent, with no failures occurring during adhesive tape peel tests. © 2002 The Electrochemical Society. All rights reserved.read more
Citations
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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Journal ArticleDOI
Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
TL;DR: A review of the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication can be found in this paper, where the authors provide a deeper understanding about the underlying deposition process and the physical and electrical properties of the deposited films.
Journal ArticleDOI
Atomic layer deposition-Sequential self-limiting surface reactions for advanced catalyst "bottom-up" synthesis
TL;DR: In this article, a review of the surface chemistry and growth behavior of ALD on metal surfaces is presented, and the methods of tailoring the catalytic performance of metal catalysts including activity, selectivity and stability, through selective blocking of the low-coordination sites of metal nanoparticles, the confinement effect, and formation of new metal-oxide interfaces.
References
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Journal ArticleDOI
Atomic layer epitaxy—a valuable tool for nanotechnology?
Mikko Ritala,Markku Leskelä +1 more
TL;DR: Atomic layer epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors as discussed by the authors, and its potentials for nanotechnology are introduced.
Journal ArticleDOI
Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
TL;DR: In this article, the authors use a thin, conformal Ta or Ti/TiN films on the walls of a dielectric trench or via which reduces or eliminates out-diffusion of the primary conductor, usually Cu, into the dielectrics.
Journal ArticleDOI
Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2 (M = Ni, cu, Pt) precursors
TL;DR: In this article, the authors investigated the feasibility of metallic thin film growth by atomic layer epitaxy (ALE) in the case of divalent metal β-diketonate-type precursor M(acac)2 (M=Ni, Cu and Pt) at 250°C and 1 mbar.
Journal ArticleDOI
Atomic Layer Deposition of Copper Seed Layers
Raj Solanki,Balu Pathangey +1 more
TL;DR: In this paper, the conformal resistivities of thin and conformal copper films were examined using atomic layer deposition as possible seed layers for subsequent electrodeposition, and they were shown to be highly conformal over high aspect ratio trenches.
Journal ArticleDOI
Enhanced adhesion of copper to dielectrics via titanium and chromium additions and sacrificial reactions
S. W. Russell,S. A. Rafalski,S. A. Rafalski,R. L. Spreitzer,R. L. Spreitzer,J. Li,J. Li,Mansour Moinpour,Farhad Moghadam,Terry Alford +9 more
TL;DR: In this paper, the authors measured the force required to separate films from substrates by scratch testing and found that the force decreases with temperature on all substrates, generally exhibiting better adhesion on SiO2 than on PSG or BPSG.