Journal ArticleDOI
Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001)
TLDR
In this article, an estimation for the band offsets and the fundamental band gap was presented for Si1−x−yGexCy alloys tensile or compressive strained on Si(001).Abstract:
An estimation for the band offsets and the fundamental band gap will be presented for Si1−x−yGexCy alloys tensile or compressive strained on Si(001). This estimation considers both the band lineup at the interface of two different materials as well as the strain effects. Unknown material parameters have been adjusted to obtain the best agreement with experimental results for tensile strained Si1−yCy layers. The obtained results agree very well with the first experimental data for the effect of C on band-structure properties in Si1−x−yGexCy. For a completely strain-compensated (cubic) Si1−x−yGexCy layer, we predict significant “Ge effects” (smaller gap than Si, valence-band offset to Si) with values depending on the Ge content.read more
Citations
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Journal ArticleDOI
SiGeC/Si superlattice microcoolers
Xiaofeng Fan,Gehong Zeng,Chris LaBounty,John E. Bowers,Edward T. Croke,Channing C. Ahn,Scott T. Huxtable,Arun Majumdar,Ali Shakouri +8 more
TL;DR: SiGeC/Si superlattice microcoolers with dimensions as small as 40×40 µm^2 were fabricated and characterized in this article, where they were grown on Si substrates by molecular beam epitaxy and thermal conductivity was measured by the 3omega method.
Journal ArticleDOI
Fabrication technology of SiGe hetero-structures and their properties
Yasuhiro Shiraki,Akira Sakai +1 more
TL;DR: In this article, the authors review the fabrication technology of SiGe hetero-structures aiming at growth of high quality materials and discuss the relaxation of strain of siGe buffer layers grown on Si substrates.
Journal ArticleDOI
Improvement in NiSi/Si contact properties with C-implantation
TL;DR: In this paper, the effects of C ion implantation into Si substrates on electrical properties of NiSi/Si(001) contacts were investigated, and it was shown that the increase in sheet resistance of a NiSi layers on Si was effectively suppressed by the C implantation, which is due to preventing the agglomeration of polycrystalline NiSi grains.
Journal ArticleDOI
Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)
TL;DR: In this paper, the authors investigated the relationship between the hydrostatic strain, the uniaxial strain and the intrinsic chemical effect of Ge and C on the band offsets of Si(001) substrate.
Journal ArticleDOI
Band alignment and conversion efficiency in Si/Ge type-II quantum dot intermediate band solar cells
TL;DR: In this paper, the effect of the type II band alignment in the quantum dot (QD) IB SCs on the above percentage is analyzed and the potential of the Ge/Si system for fabrication of type II QD IB SC is discussed.
References
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Journal ArticleDOI
Band lineups and deformation potentials in the model-solid theory.
TL;DR: In this paper, a theoretical model is presented to predict the band offsets at both lattice-matched and pseudomorphic strained-layer interfaces, based on the local density functional pseudopotential formalism and the ''model solid approach'' of Van de Walle and Martin.
Journal ArticleDOI
Theoretical calculations of heterojunction discontinuities in the Si/Ge system.
TL;DR: A theoretical study of the structural and electronic properties of pseudomorphic Si/Ge interfaces, in which the layers are strained such that the lattice spacing parallel to the interface is equal on both sides.
Journal ArticleDOI
Piezo-Electroreflectance in Ge, GaAs, and Si
Fred H. Pollak,Manuel Cardona +1 more
TL;DR: In this article, piezoelectroreflectance in Ge, Si and GaAs was studied for uniaxial stress effects on electronic energy bands in three different energy bands.
Journal ArticleDOI
Optical band gap of the ternary semiconductor Si1−x−yGexCy
TL;DR: In this article, an indirect band gap Γv25' → Δc1 was found for the new semiconductor Si1−x−yGexCy over most compositions x and y.
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