Journal ArticleDOI
Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
TLDR
In this paper, the experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported.Abstract:
The experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress results in a positive shift in the threshold voltage, while the transfer curve hardly moves when negative stress is induced. The time evolution of threshold voltage is described by the stretched-exponential equation, and the shift is attributed to the electron injection from the channel into interface/dielectric traps. The stress amplitudes and stress temperatures are considered as important factors in threshold voltage instabilities, and the stretched-exponential equation is well fitted in various bias temperature stress conditions.read more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Journal ArticleDOI
Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
Kulbinder K. Banger,Yoshihisa Yamashita,Kiyotaka Mori,Rebecca L. Peterson,Rebecca L. Peterson,Timothy J. Leedham,J. Rickard,Henning Sirringhaus +7 more
TL;DR: The formation of amorphous metal oxide semiconducting thin-films using a ‘sol–gel on chip’ hydrolysis approach from soluble metal alkoxide precursors affords unprecedented high field-effect mobilities, reproducible and stable turn-on voltages Von≈0 V and high operational stability at maximum process temperatures as low as 230 °C.
Journal ArticleDOI
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
Journal ArticleDOI
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
TL;DR: The origins of the prominent features of AOS devices from the viewpoint of materials science of A OS indicate that electron transport in oxide semiconductors are insensitive to random structures and these oxides do not form high-density defects that affect electron transport and TFT operation.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
A. Suresh,John F. Muth +1 more
TL;DR: In this paper, the effects of bias stress on transistor performance were investigated for thin-film transistors and it was shown that the threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage.
Journal ArticleDOI
Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors
Frank R. Libsch,Jerzy Kanicki +1 more
TL;DR: In this article, the threshold voltage instabilities in nitride/oxide dual gate dielectric amorphous silicon (a•Si:H) thin-film transistors are investigated as a function of stress time, stress temperature, and stress bias.
Journal ArticleDOI
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
TL;DR: In this paper, the authors report characteristic of indium gallium zinc oxides (GIZOs) which is strongly associated with the film surface, and they show that at the pressure of 8×10−6Torr, the turn-on voltage dramatically shifts to nearly −47V of the negative gate bias direction.
Journal ArticleDOI
Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors
TL;DR: In this paper, the authors measured the time and temperature dependence of two prominent instability mechanisms in amorphous silicon thin-film transistors, namely, the creation of metastable states in the a•Si:H and the charge trapping in the silicon nitride gate insulator.
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Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
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