Journal ArticleDOI
Bright peak enhanced x-ray clear phase mask
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TLDR
The clear bright peak enhanced x-ray phase mask (BPEXPM) as discussed by the authors employs the constructive interference of spatially coherent radiation as opposed to the destructive interference that is used in all the other phase-shifting schemes.Abstract:
A clear bright peak enhanced x-ray phase mask (BPEXPM) is described. It employs the constructive interference of spatially coherent radiation as opposed to the destructive interference that is used in all the other phase-shifting schemes. This type of mask shows ultrahigh resolution imaging, feature reduction from the mask critical dimension (CD), and enhanced transmission. It has been simulated and verified experimentally with a 320 nm mask CD. Specifically, the BPEXPM exhibits: (1) approximately three times higher effective sensitivity, 40 mJ/cm2 dose to mask for Shipley XP-9947E, a positive-tone chemically amplified resist that normally has a sensitivity of 120 mJ/cm2 in the x-ray region and (2) resolution of 54 nm features in XP-9947E at a 50 μm gap for a 320 nm mask CD. The simulation for the BPEXPM also predicts a wafer image CD of 31 nm at 10 μm gaps with a 150 nm mask CD.read more
Citations
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Journal Article
Improving resolution in photolithography with a phase-shifting mask
TL;DR: The phase-shifting mask as mentioned in this paper consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite.
Journal ArticleDOI
Functional antibody immobilization on 3-dimensional polymeric surfaces generated by reactive ion etching
Victor C. Rucker,Karen Havenstrite,Blake A. Simmons,Shane M. Sickafoose,and Amy E. Herr,Renee Shediac +5 more
TL;DR: This work demonstrates a potentially useful fabrication methodology for constructing antibody microarrays on plastic substrates by patterning antibodies onto the surfaces of polymer substrates using reactive ion etching.
Journal ArticleDOI
FT-IR study of a chemically amplified resist for X-ray lithography.
TL;DR: Results showed that the performance of UVIII could be optimized at the PEB temperature of 140 °C, a time of 2 min, and X-ray exposure dose of 12 mJ/cm2, and the change in resist thickness after PEB was also measured.
Journal ArticleDOI
Modeling, fabrication, and experimental application of clear x-ray phase masks
TL;DR: In this article, the use of clear phase-mask materials as absorbers for x-ray exposures is extensively modeled, and the requirements for effective fabrication of the masks, and some experimental verification of this approach to reach the sub-50nm region are provided.
References
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Journal Article
Improving resolution in photolithography with a phase-shifting mask
TL;DR: The phase-shifting mask as mentioned in this paper consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite.
Journal ArticleDOI
Improving resolution in photolithography with a phase-shifting mask
TL;DR: The phase-shifting mask as mentioned in this paper consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite.
Journal ArticleDOI
Use of a pi‐phase shifting x‐ray mask to increase the intensity slope at feature edges
TL;DR: In this article, the authors investigated the possibility of improving the slope of the irradiance profile at feature edges by using an absorber that produces a pi-phase shift in addition to about 10 dB attenuation.
Journal ArticleDOI
Study of x-ray phase-shifting masks for sub-70 nm patterning
Lei Yang,James Taylor +1 more
TL;DR: In this paper, the impact of various factors, such as exposure dose, phase-shifter thickness, sidewall slope, and mask-to-wafer gap, were studied.
Proceedings ArticleDOI
Processing latitude study on x-ray phase-shifting masks
TL;DR: In this article, the authors compared different phase-shifting technologies for XRL, such as clear phase mask, attenuated phase shifting mask, and alternating aperture phase shifting masks through computer simulation.