Journal ArticleDOI
Cathodoluminescence and photoluminescence of individual silicon nanowires
TLDR
In this article, the authors have found that the blue emission band comes from local defects in the silicon dioxide shell of the wires and the red band is caused by interfaces between the silicon oxide shell and the crystalline silicon core.Abstract:
Photoluminescence (PL) spectroscopy and Cathodoluminescence (CL) spectroscopy and imaging have been utilized to resolve red and blue emission bands from silicon nanowires We have found that the blue emission band comes from local defects in the silicon dioxide shell of the wires while the red band comes from interfaces between the silicon dioxide shell and the crystalline silicon core Time-resolved PL spectroscopy of hydrogen- and oxygen-terminated silicon nanowires, indicates that surface chemistry plays an essential role in determining the luminescence properties of the nanowires We suggest that the PL lifetime should be related to nonradiative relaxation processes that take place at the interface of the silicon core and the clad material of the nanowiresread more
Citations
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Photoluminescence from silicon nanostructures: The mutual role of quantum confinement and surface chemistry
TL;DR: In this paper, a refined model that takes into account the mutual role of quantum confinement and surface chemistry in shaping the optical properties of these nanostructures should be considered, which can explain the entire spectrum of optical phenomena in silicon nano-structures.
Journal ArticleDOI
Freestanding silicon quantum dots: origin of red and blue luminescence
Anoop Gupta,Hartmut Wiggers +1 more
TL;DR: The results indicate that the red emission isrelated to the quantum confinement effect, while the blue emission from Si-QDs is related to defect states at the newly formed silicon oxide surface.
Journal ArticleDOI
Coexistence of 1D and quasi-0D photoluminescence from single silicon nanowires.
TL;DR: Single silicon nanowires (Si-NWs) prepared by electron-beam lithography and reactive-ion etching are investigated by imaging optical spectroscopy under variable temperatures and laser pumping intensities to reveal a large variability of photoluminescence (PL) along a single Si-NW.
Journal ArticleDOI
Effects of gas pressure on the synthesis and photoluminescence properties of Si nanowires in VHF-PECVD method
TL;DR: In this article, SiNWs were grown on an Au-coated Si(111) substrate at various gas pressures by very high frequency plasma enhanced chemical vapor deposition via the vapor-liquid-solid mechanism.
Journal ArticleDOI
Fabrication and photoluminescence properties of silicon nanowires with thin surface oxide layers
TL;DR: Si nanowires have been synthesized by a novel oxide-assistant growth mechanism using boron powder and silicon oxide as reactants as discussed by the authors, which can find potential applications in nanoscale electric and optoelectronic devices.
References
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Journal ArticleDOI
A laser ablation method for the synthesis of crystalline semiconductor nanowires
TL;DR: Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
Journal ArticleDOI
Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
Yi Cui,Charles M. Lieber +1 more
TL;DR: The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.
Journal ArticleDOI
The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
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Small-Diameter Silicon Nanowire Surfaces
TL;DR: These hydrogen-terminated SiNW surfaces seem to be more oxidation-resistant than regular silicon wafer surfaces, because atomically resolved STM images of SiNWs were obtained in air after several days' exposure to the ambient environment.
Journal ArticleDOI
Oxide-Assisted Growth of Semiconducting Nanowires†
TL;DR: In this paper, the oxide-assisted growth (OAG) technique was proposed for the growth of nanostructured materials. But the OAG technique is not suitable for high-purity silicon nanowires.