scispace - formally typeset
Journal ArticleDOI

Characterization and aging response of the d31 piezoelectric coefficient of lead zirconate titanate thin films

Reads0
Chats0
TLDR
In this paper, the d31 coefficient of a number of sputtered lead zirconate titanate (PZT) thin films with thicknesses between 0.6 and 3 μm was analyzed.
Abstract
The wafer flexure technique was used to characterize the d31 coefficient of a number of sol–gel and radio frequency (rf) sputtered lead zirconate titanate (PZT) thin films with thicknesses between 0.6 and 3 μm. Typical d31 values for well-poled 52/48 sol–gel films were found to be between −50 and −60 pC/N. The rf sputtered films possessed large as-deposited polarizations which produced d31 coefficients on the order of −70 pC/N in some unpoled films. The subsequent poling of the material, in a direction parallel to the preferred direction increased the d31 coefficient to values of about −85 pC/N. The aging behavior of the d31 coefficient was also investigated. For sol–gel films the aging rate was found to be independent of poling direction and to range from 4% per decade for a 2.5 μm film to 8% per decade for a 0.6 μm film. In contrast, the aging rate of sputtered films was strongly dependent on poling direction, with maximum and minimum rates of 26% and 2% per decade recorded. These aging rates are very h...

read more

Citations
More filters
Journal ArticleDOI

The Properties of Ferroelectric Films at Small Dimensions

TL;DR: A review of the literature on size effects in ferroelectric materials, with an emphasis on thin film perovskite ferroelectrics, can be found in this paper.
Journal ArticleDOI

Piezoelectric Ribbons Printed onto Rubber for Flexible Energy Conversion

TL;DR: Fundamental characterization of the ribbons by piezo-force microscopy indicates that their electromechanical energy conversion metrics are among the highest reported on a flexible medium, enabling a host of exciting avenues in fundamental research and novel applications.
Journal ArticleDOI

Processing, Structure, Properties, and Applications of PZT Thin Films

TL;DR: Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization-electric field dependence called a hysteresis loop as discussed by the authors.
Journal ArticleDOI

Flexible electronics under strain: a review of mechanical characterization and durability enhancement strategies

TL;DR: In this paper, various classes of flexible electronic devices (including power sources, sensors, circuits, and individual components) are reviewed and the basic principles of device mechanics are described, and techniques to characterize the deformation tolerance and durability of these flexible devices are presented.
Journal ArticleDOI

Measurement of transverse piezoelectric properties of PZT thin films

TL;DR: In this article, the transverse piezoelectric properties of Pb(Zr, Ti)O 3 (PZT) films were estimated using a simple measuring method.
References
More filters
Journal ArticleDOI

Effects of impurity doping in lead zirconate-titanate ceramics

TL;DR: In this article, the authors investigated the effect of impurity doping on the properties of lead zirconate-titanate ceramics from the internal bias field viewpoint.
Journal ArticleDOI

Piezoelectric properties of c-axis oriented pb(zr,ti)o3 thin films

TL;DR: In this article, the c-axis oriented Pb(Zr,Ti)O3 (PZT) thin films were investigated and the results revealed that the PZT films exhibited excellent ferroelectricity with a remanent polarization more than 50 μC/cm2.
Journal ArticleDOI

Voltage offsets in (Pb,La)(Zr,Ti)O3 thin films

TL;DR: In this article, a voltage offset in O3 films from their pulsed laser deposition temperature in a reducing ambient is explained by a process-induced accumulation of oxygen vacancies at one interface, oxygen vacancy defect defect−dipole complexes throughout the film, and trapping of free electrons at the interface of positive polarization.
Journal ArticleDOI

Voltage shifts and imprint in ferroelectric capacitors

TL;DR: In this article, the role of defect dipoles in voltage offsets in Pb(Zr,Ti)O3 capacitors was investigated. And they found that the inclusion of a dopant element that occupies a portion of the Ti(ZR) sites and has an oxidation state greater than +4 reduces the thermally induced voltage shifts observed in the capacitors.
Journal ArticleDOI

The wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films

TL;DR: In this paper, a simple and inexpensive method for evaluating the transverse piezoelectric coefficient (d 31 ) of PZT thin films is described. The technique is based upon the flexure of a coated substrate, which imparts an ac two-dimensional stress to the PZE. The surface charge generated via the mechanical loading is converted to a voltage by an active integrator.
Related Papers (5)