Proceedings ArticleDOI
Characterization of HfO 2 on Hafnium-Indium-Zinc Oxide HIZO layer metal-insulator-semiconductor structures deposited by RF sputtering
TLDR
In this paper, the electrical properties of RF magnetron sputtered HfO 2 layers as dielectric and Hafnium-Indium-Zinc-Oxide HIZO as semiconductor in metal-insulator-semiconductor (MIS) structures are investigated.Abstract:
The electrical properties of RF magnetron sputtered HfO 2 layers as dielectric and Hafnium-Indium-Zinc-Oxide HIZO as semiconductor in metal-insulator-semiconductor (MIS) structures are investigated. The dielectric constant of the HfO 2 layer was around 9 measured at 10 kHz. The critical electric field was higher than 5×105 V/cm and the leakage current below 5×10−9 A/cm2. The effective charged density of interface states in the order of 5×1012 cm−2. Flat band shift due to polarization of the dielectric at voltage rage between −5 and 5 V is below 0.5 V. The RF deposited HIZO layer presents higher density of interface and bulk traps than similar layers deposited by other more complex techniques requiring higher processing temperature. However, results indicate that they can still be used in low voltage range amorphous oxide semiconductor thin film transistors AOSTFTs.read more
Citations
More filters
Proceedings ArticleDOI
Hafnium-Indium-Zinc oxide thin film transistors using HfO 2 as gate dielectric, with both layers deposited by RF sputtering
C. A. Pons-Flores,I. Hernandez,Magali Estrada,I. Garduno,Antonio Cerdeira,Julio C. Tinoco,Israel Mejia,Rodrigo Picos +7 more
TL;DR: In this paper, the electrical performance of RF magnetron sputtered HfO 2 and thermally grown SiO 2 was compared using two different gate dielectrics: a) RF sputtered hfO2 and b) thermally growing siO 2.
References
More filters
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
Journal ArticleDOI
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
Chang-Jung Kim,Sang-Wook Kim,Je-Hun Lee,Jin-Seong Park,Sunil Kim,Jae-Chul Park,Eunha Lee,Jae Chul Lee,Youngsoo Park,Joo-Han Kim,Sung Tae Shin,U-In Chung +11 more
TL;DR: In this paper, the authors developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically.
Journal ArticleDOI
High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
TL;DR: In this article, the time dependence of the threshold voltage (Vth) shift in amorphous hafnium-indium-zinc oxide (a-HIZO) thin film transistor has been reported under on-current bias temperature stress measured at 60 °C.
Journal ArticleDOI
Comparative study on electrical and microstructural characteristics of ZrO2 and HfO2 grown by atomic layer deposition
TL;DR: In this paper, it was shown that the dielectric constant of ALD-HfO2 is significantly lower than that of ZrO2 (∼20) due to the differences in microstructure and also atomic density of the film.