Journal ArticleDOI
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
Chang-Jung Kim,Sang-Wook Kim,Je-Hun Lee,Jin-Seong Park,Sunil Kim,Jae-Chul Park,Eunha Lee,Jae Chul Lee,Youngsoo Park,Joo-Han Kim,Sung Tae Shin,U-In Chung +11 more
TLDR
In this paper, the authors developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically.Abstract:
We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications.read more
Citations
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Journal ArticleDOI
Full-colour quantum dot displays fabricated by transfer printing
Tae-Ho Kim,Kyung Sang Cho,Eun-Kyung Lee,Sang-Jin Lee,Jungseok Chae,Jung Woo Kim,Do Hwan Kim,Jang Yeon Kwon,Gehan A. J. Amaratunga,Sang Yoon Lee,Byoung Lyong Choi,Young Kuk,Jong Min Kim,Kinam Kim +13 more
TL;DR: In this paper, a size-selective quantum dot patterning technique that involves kinetically controlling the nanotransfer process without a solvent is described, which allows fabrication of a 4-inch (or larger) thin-film transistor display with high colour purity and extremely high resolution.
Journal ArticleDOI
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
Journal ArticleDOI
Review paper: Transparent amorphous oxide semiconductor thin film transistor
TL;DR: In this paper, the authors reviewed and summarized recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance of thin film transistors with oxide semiconductors.
Journal ArticleDOI
Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors.
Jonathan W. Hennek,Jeremy Smith,Aiming Yan,Myung-Gil Kim,Wei Zhao,Vinayak P. Dravid,Antonio Facchetti,Tobin J. Marks +7 more
TL;DR: It is concluded that the metal oxide lattice formation enthalpy (ΔH(L)) and metal ionic radius are the best predictors of IXZO oxygen getter efficacy.
Journal ArticleDOI
Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
Jang Yeon Kwon,Jae Kyeong Jeong +1 more
TL;DR: In this article, a review of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs) is presented, and the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
TL;DR: The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated in this paper, where the authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IZO (channel).
Journal ArticleDOI
Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature
Elvira Fortunato,Pedro Barquinha,Ana Pimentel,Alexandra Gonçalves,António Marques,Luís Pereira,Rodrigo Martins +6 more
Journal ArticleDOI
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
TL;DR: In this article, transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated.