Chemical mapping of polymer photoresistsby scanning transmission x-ray microscopy

TLDR: In this article, a post-exposure bake was performed on poly(4-t-butoxycarbonyloxystyrene) PTBOCST resist, imprinted by deep ultraviolet lithography with a line∕space pattern of 1.10μm∕0.87μm followed by a postexposed bake, and chemical contrast was obtained by measuring the x-ray absorption at an energy of 290.5 eV.

Abstract: Scanning transmission x-ray microscopy (STXM) is shown to be a powerful imaging technique that provides chemical selectivity and high spatial resolution (∼35nm) for studying chemically amplified photoresists. Samples of poly(4-t-butoxycarbonyloxystyrene) PTBOCST resist, imprinted by deep ultraviolet lithography with a line∕space pattern of 1.10μm∕0.87μm followed by a post-exposure bake, are used to demonstrate STXM imaging capabilities to extract photoresist latent images. Chemical contrast is obtained by measuring the x-ray absorption at an energy of 290.5 eV, corresponding to a carbon K shell electronic transition to the unoccupied π* molecular orbital of the PTBOCST carbonyl group. A quantitative analysis provides the spatial distribution of the fraction of the unexposed and deprotected polymers remaining after the post-exposure bake stage as well as the thickness of both regions. Both chemical and topographical contributions to the total contrast are estimated. Advantages and limitations of STXM in co...