Journal ArticleDOI
Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
TLDR
In this paper, the ultraviolet photo-field effects in amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs) compared with those in hydrogenated Amorphous Si:H TFT were discussed.Abstract:
We discuss the ultraviolet (UV) photo-field effects in amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si:H) TFTs. It is shown that the UV illumination induces a much more significant threshold voltage (Vt) decrease and OFF-current increase for the a-IGZO TFTs than for the a-Si:H TFTs. The significant Vt decrease is found to take several tens of min to return to the initial state after switching off the UV light. A qualitative model is introduced to explain the photoresponse unique to the a-IGZO TFTs.read more
Citations
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Journal ArticleDOI
Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Journal ArticleDOI
Material characteristics and applications of transparent amorphous oxide semiconductors
Toshio Kamiya,Hideo Hosono +1 more
TL;DR: In this paper, the authors reviewed the recent advances in fundamental science of transparent amorphous oxide semiconductors and their application in thin-film transistors (TFTs) and placed emphasis on the view that high ionicity in chemical bonding and large spherical spread of unoccupied metal s orbitals in pblock metal oxides lead to the realization of electronic structures that are advantageous for n-channel TFT applications.
Journal ArticleDOI
O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
TL;DR: In this article, the authors show that O-vacancy acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors.
Journal ArticleDOI
O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
TL;DR: In this article, it was shown that O-vacancy acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors.
Journal ArticleDOI
Persistent photoconductivity in Hf–In–Zn–O thin film transistors
Khashayar Ghaffarzadeh,Arokia Nathan,John Robertson,Sang-Wook Kim,Sanghun Jeon,Chang-Jung Kim,U-In Chung,Je-Hun Lee +7 more
TL;DR: In this paper, the gate voltage can control the decay of persistent photoconductivity in the dark, giving rise to a memory action, which is further corroborated by the photoluminescence spectrum of the HIZO.
References
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TL;DR: In this paper, a-IGZO is used as the channel layer for flexible and transparent TFTs. But, the performance of the flexible TFT was evaluated at room temperature and at temperatures up to 500 °C.
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High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta,Masafumi Sano,Katsumi Abe,Toshiaki Aiba,Tohru Den,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Hideo Hosono +8 more
TL;DR: In this paper, a-IGZO channels were fabricated using amorphous indium gallium zinc oxide channels by rf-magnetron sputtering at room temperature.
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