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Open AccessJournal ArticleDOI

Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films

TLDR
The domain wall conduction, nonlinear and highly asymmetric due to the specific local probe measurement geometry, shows thermal activation at high temperatures, and high stability over time.
Abstract
Domain wall conduction in insulating Pb(Zr(0.2) Ti(0.8))O(3) thin films is demonstrated. The observed electrical conduction currents can be clearly differentiated from displacement currents associated with ferroelectric polarization switching. The domain wall conduction, nonlinear and highly asymmetric due to the specific local probe measurement geometry, shows thermal activation at high temperatures, and high stability over time.

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Citations
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Journal ArticleDOI

Domain wall nanoelectronics

TL;DR: In this paper, a review of magnetoelectric domain walls is presented, focusing on magneto-electrics and multiferroics but making comparisons where possible with magnetic domains and domain walls.
Journal ArticleDOI

Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion.

TL;DR: An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halideperovskites and ferroelectric perovkites) for future multifunctional energy conversion and storage devices is provided.
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Thin-film ferroelectric materials and their applications

TL;DR: In this article, the authors focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways, and discuss several exciting possibilities for the development of new devices, including those in electronic, thermal, photovoltaic applications, and transduction sensors and actuators.
Journal ArticleDOI

Free-electron gas at charged domain walls in insulating BaTiO 3

TL;DR: This work shows the existence of 'strongly' charged domain walls that break polarization continuity, but are stable and conduct steadily through a quasi-two-dimensional electron gas in the prototypical ferroelectric BaTiO3, thus adding mobility to functional interfaces.
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Experimental demonstration of hybrid improper ferroelectricity and the presence of abundant charged walls in (Ca,Sr)3Ti2O7 crystals

TL;DR: The first experimental demonstration of room-temperature switchable polarization in bulk crystals of Ca3Ti2O7, as well as Sr-doped Ca3 Ti 2O7 is provided, which provides new research opportunities for new stable ferroelectrics of Ruddlesden-Popper compounds, and for meandering conducting domain walls formed by planar polarization.
References
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Journal ArticleDOI

Electron Emission in Intense Electric Fields

TL;DR: In this article, the main features of the extraction of electrons from cold metals by intense electric fields are well known, and an approximate theory of the effect was first developed by Schottky.
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Physics and Applications of Bismuth Ferrite

TL;DR: In this paper, the authors summarize both the basic physics and unresolved aspects of BiFeO3 and device applications, which center on spintronics and memory devices that can be addressed both electrically and magnetically.
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Conduction at domain walls in oxide multiferroics

TL;DR: The observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3) shows that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall.
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Structure of a ferroelectric and ferroelastic monodomain crystal of the perovskite BiFeO3

TL;DR: In this paper, a ferroelastic monodomain single crystal of BiFeO3 at space group R3c is described as a rhombohedrally distorted simple cubic perovskite cell.
Journal ArticleDOI

Tunneling Across a Ferroelectric

TL;DR: Spontaneously polarized materials through which electrons pass by tunneling may be used in novel electronic devices and may reveal new basic physics at the nanometer scale as discussed by the authors. But such materials are difficult to obtain and expensive to construct.
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