Domain wall nanoelectronics
Gustau Catalan,Jan Seidel,Jan Seidel,Jan Seidel,Ramamoorthy Ramesh,Ramamoorthy Ramesh,James F. Scott +6 more
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TLDR
In this paper, a review of magnetoelectric domain walls is presented, focusing on magneto-electrics and multiferroics but making comparisons where possible with magnetic domains and domain walls.Abstract:
Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or N\'eel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.read more
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Journal ArticleDOI
Advances in magnetoelectric multiferroics.
TL;DR: Progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and usage in applications are reviewed.
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Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong,Reji Thomas,Ram S. Katiyar,James F. Scott,Hermann Kohlstedt,A. Petraru,Cheol Seong Hwang +6 more
TL;DR: The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
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Control of magnetism by electric fields
TL;DR: This Review summarizes the experimental progress made in the electrical manipulation of magnetization in such materials, discusses the current understanding of the mechanisms, and finally presents the future prospects of the field.
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Flexoelectric Effect in Solids
TL;DR: Flexoelectricity is a universal effect allowed by symmetry in all materials as discussed by the authors and has been studied in many nanoscale systems, and potential applications of this electromechanical phenomenon have been discussed.
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Mechanical Writing of Ferroelectric Polarization
Haidong Lu,Chung Wung Bark,D. Esqué-de los Ojos,Jorge Alcalá,Chang-Beom Eom,Gustau Catalan,Alexei Gruverman +6 more
TL;DR: It is demonstrated that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film, enabling applications in which memory bits are written mechanically and read electrically.
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