Journal ArticleDOI
Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes
TLDR
In this article, two methods for producing Si-oxide barriers upon which crystalline Si layers can be grown are presented; one method entails oxide island nucleation on a clean vicinal Si(001) surface, while the second method makes use of void formation in ultrathin oxides on the Si(100) surface at elevated temperatures.Abstract:
Two methods for producing Si-oxide barriers upon which crystalline Si layers can be grown are presented. One method entails oxide island nucleation on a clean vicinal Si(001) surface. The second method makes use of void formation in ultrathin oxides on the Si(100) surface at elevated temperatures. Either method results in an oxide barrier which is porous and the exposed Si within these pores can serve as a way to seed c-Si overgrowth. We demonstrate that it is feasible to grow crystalline Si overlayers on top of such porous oxide barriers, while on the continuous Si-oxide surface, only amorphous or nanocrystalline Si layer overgrowth can be achieved. The controlled oxide growth and Si overgrowth on the oxide can find possible applications in Si-based resonant tunneling devices, optoelectronics, and other Si-based nanoelectronics.read more
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High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Patent
Controllable conduction device
Kazuo Nakazato,Kiyoo Itoh,Hiroshi Mizuta,Toshikazu Shimada,Hideo Sunami,Tatsuya Teshima,Toshiyuki Mine,Ken Yamaguchi +7 more
TL;DR: In this paper, a controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction paths, and a multiple layer structure 3 providing a multiple tunnel junction configuration in the Conduction path, with the result that current leakage is blocked by the Multiple Tunnel junction configuration when the transistor is in its off state.
Journal ArticleDOI
Nanostructuring of silicon (100) using electron beam rapid thermal annealing
TL;DR: In this article, a technique for the rapid, uncomplicated and lithography free fabrication of silicon nanostructures on both n-type and p-type Si(100) substrates is presented.
Patent
Semiconductor memory device and manufacturing method thereof
Shinichiro Kimura,Toshiaki Yamanaka,Kiyoo Itoh,Takeshi Sakata,Tomonori Sekiguchi,Hideyuki Matsuoka +5 more
TL;DR: In this article, a semiconductor memory device of the present invention realizes nonvolatile characteristic by shielding a drain functioning as a memory node from a leakage current by a tunnel insulator, and also realizes stable and high speed operation by adding a transistor for reading to a memory cell.
Patent
Self-aligned and self-limited quantum dot nanoswitches and methods for making same
TL;DR: In this article, a method for forming quantum tunneling devices comprising the steps of: (1) providing a quantum well, the quantum well comprising a composite material, the composite material comprising at least a first and a second material; and (2) processing the Quantum Well so as to form at least one segregated quantum tunnel structure encased within a shell comprised of a material arising from processing the composite materials, wherein each segregated quantum structure is substantially comprised of the first material.
References
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Journal ArticleDOI
Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study.
TL;DR: In this paper, the number density of islands formed during deposition using scanning tunneling microscopy was analyzed by analyzing the number of islands forming during deposition of Si(001) in Si(002).
Journal ArticleDOI
High-temperature SiO2 decomposition at the SiO2/Si interface.
TL;DR: Etude du mecanisme de decomposition de SiO 2 par des techniques de diffusion d'ions et de microscopies.
Journal ArticleDOI
Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2
F. W. Smith,G. Ghidini +1 more
TL;DR: In this article, the critical conditions involving oxygen pressure and substrate temperature which are necessary for the growth of SiO/sub 2/ to occur on these Si surfaces have been determined, and are found to be independent of substrate orientation and doping type under the conditions studied.
Journal ArticleDOI
Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon
J. J. Lander,J. Morrison +1 more
TL;DR: In this article, low voltage electron diffraction and pumping speed measurements have been used to study the reactions of oxygen with clean Si (111) and (100) surfaces in the temperature range between 600° and 1000°C and the oxygen pressure range between 7×10−9 and 1 ×10−4 mm Hg.
Journal ArticleDOI
Resonant tunneling via microcrystalline-silicon quantum confinement.
TL;DR: Observation experimentale de l'effet tunnel resonnant impliquant les etats-quantiques discrets dans Si microcristallin (μc-Si) avec des barrieres de SiO 2 amorphe (a-SiO 2 ).
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