Journal ArticleDOI
Crystal structure design and multiband physical properties of quaternary sulfide Ba5Bi2Co2S10 for optoelectronic conversion.
Kejun Bu,Xian Zhang,Jian Huang,Mengjia Luo,Chong Zheng,Ruiqi Wang,Dong Wang,Jianqiao He,Wei Zhao,Xiangli Che,Fuqiang Huang,Fuqiang Huang +11 more
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TLDR
A new multiband compound, namely Ba5Bi2Co2S10, which crystallizes in the space group C22h-P21/m (No. 11) of the monoclinic system, showing typical multi-absorption characteristics and evident optoelectronic conversion properties.About:
This article is published in Chemical Communications.The article was published on 2019-04-18. It has received 6 citations till now. The article focuses on the topics: Band gap & Monoclinic crystal system.read more
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The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films
TL;DR: A thin layer of a topological insulator grown on the surface of a superconductor is shown to acquire a superconducting gap, laying the groundwork for experimentally realizing Majorana fermions in condensed matter physics.
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Ba3HgGa2S7: A Zero-Dimensional Quaternary Sulfide Featuring a Unique [Hg2Ga4S14]12- String and Exhibiting a High Photocurrent Response.
TL;DR: In this article , a quaternary sulfide, Ba3HgGa2S7 (BHGS), was obtained by a solid-state reaction at 1123 K. BHGS has a wide band gap of 3.64 eV and a large birefringence of 0.09 at 2100 nm.
Journal ArticleDOI
A novel two-dimensional oxysulfide Sr3.5Pb2.5Sb6O5S10: synthesis, crystal structure, and photoelectric properties
Ruiqi Wang,Kejun Bu,Xian Zhang,Yuhao Gu,Yi Xiao,Zhaohuang Zhan,Fuqiang Huang,Fuqiang Huang,Fuqiang Huang +8 more
TL;DR: In this article, a two-dimensional oxysulfide, Sr3.5Pb2.5Sb6O5S10, with a band gap of 1.34 eV was successfully synthesized.
Journal ArticleDOI
Visible-light photoelectric response in semiconducting quaternary oxysulfide FeOCuS with anti-PbO-type structure.
Wei Du,Ganghua Zhang,P.P. Chen,Pingying Tang,Jing Wang,Dezeng Li,Jingshan Hou,Yongzheng Fang +7 more
TL;DR: In this article, a quaternary oxysulfide, FeOCuS, was synthesized with a tetragonal anti-PbO-type structure and a visible-light bandgap of about 1.37 eV.
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Synthesis of uranium mixed anion compounds synthesized using the Boron-Chalcogen Mixture method: Ba6Co6U0·91S13·5O0.5 and Ba5·47K0·53Zn6US13·5O0.5
TL;DR: The Boron-Chalcogen Mixture (BCM) method has been adapted to achieve the partial oxide to sulfide conversion of Ba2MUO6 (M = Co, Zn) as discussed by the authors .
References
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Journal ArticleDOI
Understanding intermediate-band solar cells
TL;DR: The intermediate-band solar cell is designed to provide a large photogenerated current while maintaining a high output voltage as mentioned in this paper, and various alloys have been employed in the practical implementation of these devices.
Journal ArticleDOI
A new approach to high‐efficiency multi‐band‐gap solar cells
TL;DR: In this article, the advantages of using multi-quantum-well or superlattice systems as the absorbers in concentrator solar cells are discussed, and an effective band-gap variation that covers the high-efficiency region of the solar spectrum can be obtained.
Journal ArticleDOI
The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films
Mei Xiao Wang,Canhua Liu,Jin-Peng Xu,Fang Yang,Lin Miao,Mengyu Yao,C. L. Gao,Chenyi Shen,Xucun Ma,Xi Chen,Z. A. Xu,Ying Liu,Shou-Cheng Zhang,Shou-Cheng Zhang,Dong Qian,Jin-Feng Jia,Qi-Kun Xue +16 more
TL;DR: In this paper, a superconducting TI/superconductor heterostructure was fabricated by growing dibismuth triselenide (Bi2Se3) thin films on superconductor niobium diselenide substrate.
Journal ArticleDOI
Third generation photovoltaics: solar cells for 2020 and beyond
TL;DR: In this paper, it is argued that photovoltaics will evolve, in its most mature form, to a "third generation" of high-efficiency thin-film technology, which is meant is energy conversion values double or triple the 15-20% range presently targeted.
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Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon
F. G. Allen,G. W. Gobeli +1 more
TL;DR: The position of the Fermi level at the surface has been determined over the entire available range of bulk dopings for atomically clean (111) silicon surfaces cleaved in a vacuum of ${10}^{\ensuremath{-}10}$ mm Hg Surface potential is found from the difference in work function and photoelectric threshold.