Journal ArticleDOI
Current transport in high-barrier IrSi/Si Schottky diodes
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This article is published in Physical Review B.The article was published on 1990-09-15. It has received 62 citations till now. The article focuses on the topics: Schottky barrier & Schottky diode.read more
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Recent advances in Schottky barrier concepts
TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
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Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range
Subhash Chand,Jitendra Kumar +1 more
TL;DR: In this paper, current-voltage characteristics of Pd2Si/p-Si(111) Schottky barrier diodes studied over a wide temperature range (60-201 K) are shown to follow a thermionic emission-diffusion mechanism under both the forward and reverse bias conditions.
Journal ArticleDOI
On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes
Subhash Chand,Jitendra Kumar +1 more
TL;DR: In this paper, it is shown that the presence of a Gaussian distribution of barrier heights is responsible for the apparent decrease of the zero-bias barrier height and nonlinearity in the activation energy plot.
Journal ArticleDOI
Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures
Subhash Chand,Jitendra Kumar +1 more
TL;DR: In this article, the forward currentvoltage (I-V) characteristics of Pd2Si/n-Si(100) Schottky barrier diodes are shown to follow the Thermionic Emission-Diffusion (TED) mechanism in the temperature range of 52-295 K.
Journal ArticleDOI
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
TL;DR: In this article, Schottky barrier heights and current transport modes were analyzed using a combination of currentvoltage (I-V), capacitance-voltage and internal photoemission (IPE) measurements for Pd, Ni, Pt and Au.