Journal ArticleDOI
Direct deposition of magnetic dots using a scanning tunneling microscope
M. A. McCord,D. D. Awschalom +1 more
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In this article, a scanning tunneling microscope was used to directly deposit nanometer-scale structures into the input coil of a planar dc superconducting quantum interference device microsusceptometer.Abstract:
A scanning tunneling microscope has been used to directly deposit nanometer‐scale structures into the input coil of a planar dc superconducting quantum interference device microsusceptometer. Iron pentacarbonyl was used as the source gas for the deposits, yielding dots with diameters ranging from 10 to 30 nm and heights from 30 to 100 nm. Measurements on the particles at low temperatures show them to be magnetic and reveal macroscopic spin properties.read more
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Ordered magnetic nanostructures: fabrication and properties
TL;DR: The fabrication methods and physical properties of ordered magnetic nanostructures with dimensions on the submicron to nanometer scale are reviewed in this article, where various types of nanofabrication techniques are described, and their capabilities and limitations in achieving magnetic nano-structures are discussed.
Journal ArticleDOI
Nanometer-scale surface modification using the scanning probe microscope: progress since 1991
Journal ArticleDOI
Growth of high aspect ratio nanometer-scale magnets with chemical vapor deposition and scanning tunneling microscopy.
TL;DR: A combination of chemical vapor deposition and scanning tunneling microscopy techniques have been used to produce nanometer-scale, iron-containing deposits with high aspect ratios from an iron pentacarbonyl precursor both on a substrate and on the tunneling tip itself.
Journal ArticleDOI
Chemical Solid Free-Form Fabrication: Making Shapes without Molds
Paul Calvert,Robert Crockett +1 more
TL;DR: Solid free-form fabrication methods are surveyed in this article, where a number of materials can be made by depositing material layer-by-layer, allowing a much wider range of reactions to be used.
Journal ArticleDOI
Scanning superconducting quantum interference device susceptometry
Brian W. Gardner,Janice C. Wynn,Per G. Björnsson,Eric W. J. Straver,Kathryn A. Moler,John R. Kirtley,Mark B. Ketchen +6 more
TL;DR: In this article, a scanning superconducting quantum interference device (SQUID) microsusceptometer with a spatial resolution of 8 μm was tested by measuring the susceptibility of individual 3 μm diam tin disks.
References
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Journal ArticleDOI
Low‐noise modular microsusceptometer using nearly quantum limited dc SQUIDs
D. D. Awschalom,J. R. Rozen,Mark B. Ketchen,William J. Gallagher,Alan Willis Kleinsasser,Robert L. Sandstrom,B. Bumble +6 more
TL;DR: In this paper, a flexible combination of superconducting integrated circuits was used to construct a low-temperature magneto-optic microsusceptometer utilizing a dc super-conducting quantum inteference device (SQUID) detector operating near the quantum limit.
Journal ArticleDOI
Direct deposition of 10‐nm metallic features with the scanning tunneling microscope
TL;DR: In this paper, a modified scanning tunneling microscope (STM) was used to directly deposit metallic features as small as 10 nm by decomposing organometallic gases containing tungsten and gold.
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Observation of macroscopic spin phenomena in nanometer-scale magnets.
TL;DR: Low-temperature frequency-dependent magnetic-susceptibility measurements reveal a narrow resonance which grows and becomes independent of decreasing temperature.
Journal ArticleDOI
Direct writing with the scanning tunneling microscope
TL;DR: In this article, a scanning tunneling microscope was used to write metallic features directly on metallic and semiconducting surfaces without further process steps and organometallic gases were used to obtain features as small as 20 nm.
Journal ArticleDOI
High resolution, low‐voltage probes from a field emission source close to the target plane
TL;DR: In this article, a modified scanning tunneling microscope (STM) configuration was modeled as a field emitting spherical electrode close to the target plane for values of accelerating potential (V0) in the range 50-1000 V.