Journal ArticleDOI
Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds
TLDR
In this article, X-ray photoelectron spectroscopy reveals that the remarkable electronic quality of GaAs/sulfide interfaces can be attributed to the formation of AsxSy phases which grow on an oxide-free GaAs surface.Abstract:
X‐ray photoelectron spectroscopy reveals that the remarkable electronic quality of GaAs/sulfide interfaces can be ascribed to the formation of AsxSy phases which grow on an oxide‐free GaAs surface. While one of these phases is akin to As2S3, another shows significant in‐plane S—S bonding. Raman experiments indicate that the band bending on this disulfide‐ terminated surface has been reduced to 0.12 eV.read more
Citations
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Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
TL;DR: In this paper, the authors have designed, fabricated, and tested vertical-cavity surface-emitting laser (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m.
Journal ArticleDOI
Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing.
Journal ArticleDOI
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
Gang He,Xiaoshuang Chen,Z.Q. Sun +2 more
TL;DR: In this article, the authors provide an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates, and explore the possible influences of these hafnium-based gate dielectric on the current and future applications for nano-MOSFET devices.
Journal ArticleDOI
Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols
TL;DR: In this article, the steady-state photoluminescence of (100)-oriented GaAs has been studied using x-ray photoelectron spectroscopy and steadystate photodynamic properties of GaAs surfaces exposed to inorganic and organic donors.
References
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Book
Practical surface analysis: By auger and x-ray photoelectron spectroscopy
David Briggs,M. P. Seah +1 more
Journal ArticleDOI
New and unified model for Schottky barrier and III–V insulator interface states formation
TL;DR: In this article, Fermi level stabilizes after a small fraction of a monolayer of either metal or oxygen atoms have been placed on the surface of the semiconductor.
Journal ArticleDOI
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
TL;DR: In this paper, a passivated nonradiative recombination center at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor was proposed to increase the current gain of the device at low collector currents.
Journal ArticleDOI
Nearly ideal electronic properties of sulfide coated GaAs surfaces
TL;DR: In this paper, a robust covalently bonded sulfide layer was proposed to explain the favorable electronic properties of GaAs/GaAs interfaces, and the surface recombination velocity at the interface between Na2S⋅9H2O and GaAs began to approach that of the nearly ideal AlGaAs/GAAs interface.