Journal ArticleDOI
Effect of annealing ambient on SnO 2 thin film transistors
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TLDR
In this article, the effect of annealing ambient on SnO 2 thin film transistors (TFTs) is presented, where phase pure SnO2 films have been deposited using solution processed spin coating technique with SnCl 2 as the precursor material.About:
This article is published in Applied Surface Science.The article was published on 2017-10-01. It has received 41 citations till now. The article focuses on the topics: Spin coating & Annealing (metallurgy).read more
Citations
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A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics
Journal ArticleDOI
Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices.
Suresh Kumar Garlapati,Mitta Divya,Ben Breitung,Robert Kruk,Horst Hahn,Horst Hahn,Subho Dasgupta,Subho Dasgupta +7 more
TL;DR: A comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.
Journal ArticleDOI
Solution-processed SnO2 thin film for a hysteresis-free planar perovskite solar cell with a power conversion efficiency of 19.2%
TL;DR: In this article, a hysteresis-free and high-efficiency planar perovskite solar cell was developed using a solution-processed SnO2 electron-transporting layer (ETL).
Journal ArticleDOI
Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering
TL;DR: In this article, the impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated and the correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.
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Silver doped SnO2 Nanostructures for Photocatalytic Water Splitting and Catalytic Nitrophenol Reduction
Sapan K. Jain,Mohd Fazil,Farha Naaz,Jahangeer Ahmed,Saad M. Alshehri,Yuanbing Mao,Tokeer Ahmad +6 more
TL;DR: In this article , researchers all around the globe are seeking solutions to replace the non-renewable fossil fuels to meet the ever-increasing energy supply, driven by the quest of renewable and clean energy sources.
References
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
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Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
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Origins of coexistence of conductivity and transparency in SnO(2).
Çetin Kılıç,Alex Zunger +1 more
TL;DR: It is found, via first-principles calculations, that the tin interstitial and oxygen vacancy have surprisingly low formation energies and strong mutual attraction, explaining the natural nonstoichiometry of this system.