Journal ArticleDOI
Effect of Redundant Microstructure on Electromigration‐Induced Failure
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In this article, aluminum films with grain boundaries staggered throughout the film thickness, and hence with nonoverlapping sites for electromigration-induced failure, were prepared by vacuum deposition in layered or extremely fine-grained form.Abstract:
Aluminum films with grain boundaries staggered throughout the film thickness, and hence with nonoverlapping sites for electromigration‐induced failure, were prepared by vacuum deposition in layered or extremely fine‐grained form. Mean lifetimes before the occurrence of electrical opens were an order of magnitude larger than those for control films having non‐redundant grain structure. Heat‐treatment effects which reduced lifetimes to values comparable to control lifetimes were interpreted in terms of either a lifetime minimum for grain size ∼ 0.6 μ or disruption of the layered structure.read more
Citations
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Journal ArticleDOI
Electromigration in metals
Paul S. Ho,Thomas Kwok +1 more
TL;DR: In this article, an overview on the current understanding of electromigration in metals is provided. But the discussion is focused on studies in bulk metals and alloys and not on the studies in metallic thin films.
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Electromigration In Ulsi Interconnections
TL;DR: Both the wafer level and package EM testing methodologies are presented, and the rigorous data analysis that takes into account of the bimodal distribution of EM test data is presented, in order to accurately assess the EM of an interconnection.
Journal ArticleDOI
Correlation of texture with electromigration behavior in Al metallization
TL;DR: In this paper, texture analysis of aluminum films was performed at three different conditions, such that texture is the only microstructural variable, and it was shown that random and (111) fiber texture components are present in the films deposited by both partially ionized beam (PIB), physical vapor deposition and sputtering.
Journal ArticleDOI
Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity
TL;DR: In this paper, the impact of 11 alloying elements, namely, Mg, Ti, In, Sn, Al, Ag, Co, Nb, and B, at two nominal concentrations of 1 and 3 at.
Journal ArticleDOI
The role of texture in the electromigration behavior of pure aluminum lines
D. B. Knorr,Kenneth P. Rodbell +1 more
TL;DR: In this paper, the effects of microstructure on electromigration behavior were evaluated in three nominally 1 μm thick pure aluminum films, which were tested at temperatures from 423 to 523 K. The three Al films had essentially the same grain structure but different variants of an 〈111〉 texture.
References
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Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Journal ArticleDOI
Electromigration failure modes in aluminum metallization for semiconductor devices
TL;DR: In this paper, two wear-out type failure modes involving aluminum metallization for semiconductor devices are described, which involve mass transport by momentum exchange between conducting electrons and metal ions.
Journal ArticleDOI
Reduction of electromigration in aluminum films by copper doping
TL;DR: In this article, it was shown that the lifetime of aluminum films subjected to high current densities at elevated temperatures can be increased by the addition of copper and that the presence of copper causes an appreciable retardation in the rate at which this overall combination of processes takes place, thereby producing a considerable increase in lifetime.
Journal ArticleDOI
Electromigration Damage in Aluminum Film Conductors
M. J. Attardo,R. Rosenberg +1 more
TL;DR: In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.
Journal ArticleDOI
Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
R. Rosenberg,L. Berenbaum +1 more
TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
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