Journal ArticleDOI
Electrical characterization of n-type a-SiGe:H/p-type crystalline-silicon heterojunctions
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TLDR
In this article, an n-type hydrogenated amorphous silicon germanium (a-SiGe:H) on p-type crystalline-silicon heterojunctions were fabricated and electrically characterized.Abstract:
Heterojunctions with an n-type hydrogenated amorphous silicon germanium (a-SiGe:H) on p-type crystalline-silicon heterojunctions were fabricated and electrically characterized. The electrical characterization was made by current density–voltage (J–V) and capacitance–voltage (C–V) measurements. The C–V results confirm the existence of an abrupt heterojunction. The temperature dependence of the J–V curves shows that in the forward conduction at low bias voltage (V 0.5 V), the space charge limited effect becomes the main transport mechanism. The conduction and valence band discontinuities of the heterojunction and the electron affinity of the n-type a-SiGe:H film were calculated using Anderson's model. Under reverse bias conditions the J–V curves suggest that the current density is limited by hopping through the localized states into the gap. One-dimensional (1D) simulations support the proposed transport mechanisms.read more
Citations
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A compact equivalent circuit for the dark current-voltage characteristics of nonideal solar cells
TL;DR: In this paper, the authors presented a compact electrical equivalent circuit which describes the dark currentvoltage characteristics of nonideal p-n junction solar cells in a wide range of temperatures.
Book ChapterDOI
Implementation of a Linguistic Fuzzy Relational Neural Network for Detecting Pathologies by Infant Cry Recognition
TL;DR: In this paper, the implementation of a fuzzyrelational neural network model, which is tested on an infant cry classification problem, in which the objective is to identify pathologies like deafness and asphyxia in recently born babies.
Journal ArticleDOI
Planarized ambipolar a-SiGe:H thin-film transistors: Influence of the sequence of fabrication process
Miguel A. Dominguez,Pedro Rosales,Alfonso Torres,Francisco Flores,Joel Molina,Mario Moreno,José Alberto Luna,Abdu Orduña +7 more
TL;DR: In this paper, the authors presented the fabrication, characterization and modeling of inverted staggered a-SiGe:H TFTs with planarized gate electrode, where spin-on glass and silicon nitride are used as passivation layer, respectively.
Journal ArticleDOI
Band offsets and transport mechanisms of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode: Key properties for device applications
TL;DR: In this article, the authors studied the electrical properties of hydrogenated nanocrystalline silicon and crystal-silicon heterojunction diode, focusing on the band offsets and electron transport mechanisms.
Journal ArticleDOI
Effect of the front-metal work function on the performance of a-Si:H(n + )/a-Si:H(i)/c-Si(p) heterojunction solar cells
TL;DR: In this article, the effect of the front-metal work function on the energy band diagram and J-V characteristics under illumination of metal/a-Si:H(n+)/a -Si: H(i)/c-Si(p) heterojunction solar cells (HIT) was investigated by means of AFORS-Het device simulations supported by equivalent circuit modeling.
References
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Journal ArticleDOI
Experiments on Ge-GaAs heterojunctions
TL;DR: In this article, the electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described and I-V and electro-optical characteristics are consistent with a model in which the conduction-and valence-band edges at the interface are discontinuous.
Book
Metal--Semiconductor Schottky Barrier Junctions and Their Applications
TL;DR: In this paper, the Schottky-Mott theory of ideal metal-Semiconductor contact has been applied to metal-semiconductor interfaces, and a number of interesting results have been reported.
Book
The Physics and Applications of Amorphous Semiconductors
Arun Madan,Melvin P. Shaw +1 more
TL;DR: In this paper, the physics and applications of amorphous semiconductors are discussed, focusing on research problems such as the optimization of device performance while also presenting the general physics.
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