Journal ArticleDOI
Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations
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TLDR
In this paper, the electrical properties of silicon nitride/amorphous silicon structures were investigated using thin film transistors (TFTs) and metal insulator semiconductor (MIS) devices employing either a top nitride (TN) or bottom nitride(BN) as gate insulator.Abstract:
The electrical properties of silicon nitride/amorphous silicon structures were investigated using thin film transistors (TFTs) and metal insulator semiconductor (MIS) devices employing either a top nitride (TN) or bottom nitride (BN) as gate insulator. The density of states (DOS) deduced from the subthreshold transfer characteristic of the TFTs is one to two orders of magnitude higher than that obtained from quasistatic C(V) measurements on the MIS structures. This difference is discussed by considering the different thickness of the a‐Si:H layers of the two devices and the role of a fixed charge at the rear interface. Both techniques indicate a DOS in BN devices which is only slightly lower than in TN devices, by less than a factor of two. The measured field effect mobility of BN TFTs is about 70% higher. The differences in the measured field effect mobility for TN and BN configuration are discussed and ascribed to the source and drain parasitic resistances. The conclusion is verified by the fabrication of a TN TFT with a pure phosphine rear surface treatment, which exhibits performance comparable to BN TFTs.read more
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Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors
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Colloidal Quantum Dot Photovoltaics: A Path Forward
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Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods
Wolfgang L. Kalb,Bertram Batlogg +1 more
TL;DR: In this article, the spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a Pentacene-based thin-film transistor from measurements of the temperature dependence and gatevoltage dependence of the contact-corrected field effect conductivity.
Journal ArticleDOI
Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation
Junhong Na,Young Tack Lee,Jung Ah Lim,Do Kyung Hwang,Gyu Tae Kim,Won Kook Choi,Yong-Won Song +6 more
TL;DR: Noise reduction due to the Al2O3 passivation was expressed in terms of the reduced interface trap density values D(it) and N(it), extracted from the subthreshold slope (SS) and the CNF model, respectively.
Journal ArticleDOI
Thin-film organic polymer phototransistors
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