Journal ArticleDOI
Electromigration Damage in Aluminum Film Conductors
M. J. Attardo,R. Rosenberg +1 more
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TLDR
In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.Abstract:
Electromigration studies of large‐ and fine‐grain aluminum films showed that fine‐grain films were characterized by a mixed orientation and a grain size of ≈2 μ, and that large‐grain films had a highly preferred 98% 〈111〉 orientation and a grain size of ≈8 μ. Stripes fabricated from the large‐grained films had a consistently longer life, higher activation energy, and lower standard deviation of the life distribution than stripes fabricated from fine‐grained films. These results are interpreted in terms of the nature of flux divergences in the two films. Calculations give the magnitude of vacancy supersaturations at various structural divergences present in the films studied.read more
Citations
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Journal ArticleDOI
Time-dependent void nucleation during electromigration☆
TL;DR: In this paper, the critical void size, nucleation barrier and void incubation time have been derived for voids which form at two-and three-grain junctions under an electromigration-induced vacancy supersaturation.
Proceedings ArticleDOI
Two electromigration failure modes in polycrystalline aluminum interconnects
TL;DR: In this paper, the effects of metal microstructure, passivation thickness, line width and length, and EM stress conditions on the two failure modes were studied, and the model predicts that the EM resistance of partly-bamboo lines at VLSI operating conditions is limited by the slit failure mode, rather than by GB-type failures.
Proceedings ArticleDOI
Intrinsic reliability of RF power LDMOS FETs
TL;DR: In this article, the authors focus on improving the intrinsic reliability of RF-LDMOS FETs, including Hot Carrier Injection (HCI), Electromigration (EM), and device ruggedness.
Journal ArticleDOI
A Monte Carlo computer simulation of electromigration
TL;DR: In this paper, a Monte Carlo computer program is used to simulate the motion of atoms during electromigration, and the result of the impressed current is a drift of activated atoms along the grain boundaries in response to an "electron wind" force.
Journal ArticleDOI
Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique
TL;DR: In this article, the electromigration resistance of pure Al/SiO2 thin films prepared by the partially ionized beam (PIB) deposition technique can be improved significantly as compared to those deposited by the conventional means.
References
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Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Journal ArticleDOI
Current-induced marker motion in gold wires☆
H.B. Huntington,A.R. Grone +1 more
TL;DR: In this paper, the motion of light transverse scratches, used as markers, has been observed on the surface of gold wires carrying current densities of about 104 A/cm2 for periods of several days.
Journal ArticleDOI
Electromigration in Thin Al Films
I. A. Blech,E. S. Meieran +1 more
TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
Journal ArticleDOI
Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
R. Rosenberg,L. Berenbaum +1 more
TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
Journal ArticleDOI
Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films
Ilan A. Blech,Eugene S. Meieran +1 more
TL;DR: In this paper, the process of electrotransport in Al thin films was directly observed by transmission electron microscopy, and it was found that hole formation occured in regions where the electron flow was in the direction of increasing temperature.