Journal ArticleDOI
Electromigration Damage in Aluminum Film Conductors
M. J. Attardo,R. Rosenberg +1 more
Reads0
Chats0
TLDR
In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.Abstract:
Electromigration studies of large‐ and fine‐grain aluminum films showed that fine‐grain films were characterized by a mixed orientation and a grain size of ≈2 μ, and that large‐grain films had a highly preferred 98% 〈111〉 orientation and a grain size of ≈8 μ. Stripes fabricated from the large‐grained films had a consistently longer life, higher activation energy, and lower standard deviation of the life distribution than stripes fabricated from fine‐grained films. These results are interpreted in terms of the nature of flux divergences in the two films. Calculations give the magnitude of vacancy supersaturations at various structural divergences present in the films studied.read more
Citations
More filters
Journal ArticleDOI
Electromigration Behaviors and Effects of Addition Elements on the Formation of a Bi-rich Layer in Sn58Bi-Based Solders
TL;DR: In this paper, the authors investigated the electromigration behaviors and effects of the addition elements on the formation of a Bi-rich layer in Sn58Bi-based solders including Sn 58Bi (SB), Sn 58 Bi05Ag (SBA), and Sn 58 bi05Ag01Cu007Ni001Ge (SBACNG) solders at a relatively high temperature of 373 k and at a current density of 30 kA/cm2.
Journal ArticleDOI
A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulsed currents
TL;DR: In this paper, a simulation model for the major physical processes that influence the development and progression of electromigration damage due to pulsed electric currents is described, and a comparison of model behavior to that observed experimentally for steady current (DC) stressing is made.
Journal ArticleDOI
Characterization of the early stages of electromigration at grain boundary triple junctions
TL;DR: In this article, the formation and growth of holes and hillocks at grain boundary triple junctions in thin-film conductors of gold on gallium arsenide and thin-filtered silicon on (oxidized) silicon during the early stages of electromigration have been investigated through measurement of fractional change of electrical resistance ΔR/R and microstructural characterization by scanning and transmission electron microscopy.
Journal ArticleDOI
The relationship among electromigration, passivation thickness, and common-emitter current gain degradation within shallow junction NPN bipolar transistors
TL;DR: In this article, it was shown that increasing the passivation thickness simultaneously improves metal conductor lifetime and aggravates the degradation of common-emitter current gain (beta) in NPN bipolar transistors.
Journal ArticleDOI
Electromigration testing—A current problem
TL;DR: In this paper, various problems associated with conducting and evaluating electromigration tests in order to obtain valid lifetime information about actual devices are examined and means for surmounting such problems are suggested.
References
More filters
Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Journal ArticleDOI
Current-induced marker motion in gold wires☆
H.B. Huntington,A.R. Grone +1 more
TL;DR: In this paper, the motion of light transverse scratches, used as markers, has been observed on the surface of gold wires carrying current densities of about 104 A/cm2 for periods of several days.
Journal ArticleDOI
Electromigration in Thin Al Films
I. A. Blech,E. S. Meieran +1 more
TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
Journal ArticleDOI
Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
R. Rosenberg,L. Berenbaum +1 more
TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
Journal ArticleDOI
Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films
Ilan A. Blech,Eugene S. Meieran +1 more
TL;DR: In this paper, the process of electrotransport in Al thin films was directly observed by transmission electron microscopy, and it was found that hole formation occured in regions where the electron flow was in the direction of increasing temperature.