Journal ArticleDOI
Electromigration Damage in Aluminum Film Conductors
M. J. Attardo,R. Rosenberg +1 more
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TLDR
In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.Abstract:
Electromigration studies of large‐ and fine‐grain aluminum films showed that fine‐grain films were characterized by a mixed orientation and a grain size of ≈2 μ, and that large‐grain films had a highly preferred 98% 〈111〉 orientation and a grain size of ≈8 μ. Stripes fabricated from the large‐grained films had a consistently longer life, higher activation energy, and lower standard deviation of the life distribution than stripes fabricated from fine‐grained films. These results are interpreted in terms of the nature of flux divergences in the two films. Calculations give the magnitude of vacancy supersaturations at various structural divergences present in the films studied.read more
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Journal ArticleDOI
Effect of Ar Sputtering Pretreatment on the Electromigration Resistance in Al-Cu/TiN/Ti Interconnects
TL;DR: In this paper, the 1 µm-wide Al-0.5wt%Cu/TiN/Ti interconnect, on the oxidized Si(100) wafer without Al sputtering pretreatment on the SiO 2 surface prior to Ti deposition, failed after stressing with a current density of 1 × 10 6 A/cm 2 for 190 hr at 175°C.
ReportDOI
Effects of microstructural control on the failure kinetics and the reliability improvement of Al and Al-alloy interconnects
TL;DR: In this article, the microstructural mechanism of electromigration failure in Al-based thin-film conducting lines was investigated as a function of heat treatment conditions and current density, and a metallurgical method was developed to improve the electromigration resistance of Al-Based interconnects.
Journal ArticleDOI
Novel Electromigration Failure Mechanism for Aluminium-Based Metallization on Titanium Substrate
TL;DR: In this article, a phenomenological characterisation of an anomalous grain growth, observed after classical electromigration lifetests, on Al-l%Si-0.5%Cu multigrain stripes, deposited at high temperature (460°C) on a Ti substrate, is reported.
Book ChapterDOI
Reliability and Failures
TL;DR: General measures of reliability are reviewed and several of the failure mechanisms seen in silicon VLSI are discussed, suggesting that the reliability issue will become more prominent as device dimensions shrink.
References
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Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Journal ArticleDOI
Current-induced marker motion in gold wires☆
H.B. Huntington,A.R. Grone +1 more
TL;DR: In this paper, the motion of light transverse scratches, used as markers, has been observed on the surface of gold wires carrying current densities of about 104 A/cm2 for periods of several days.
Journal ArticleDOI
Electromigration in Thin Al Films
I. A. Blech,E. S. Meieran +1 more
TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
Journal ArticleDOI
Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
R. Rosenberg,L. Berenbaum +1 more
TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
Journal ArticleDOI
Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films
Ilan A. Blech,Eugene S. Meieran +1 more
TL;DR: In this paper, the process of electrotransport in Al thin films was directly observed by transmission electron microscopy, and it was found that hole formation occured in regions where the electron flow was in the direction of increasing temperature.