Journal ArticleDOI
Electromigration Damage in Aluminum Film Conductors
M. J. Attardo,R. Rosenberg +1 more
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TLDR
In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.Abstract:
Electromigration studies of large‐ and fine‐grain aluminum films showed that fine‐grain films were characterized by a mixed orientation and a grain size of ≈2 μ, and that large‐grain films had a highly preferred 98% 〈111〉 orientation and a grain size of ≈8 μ. Stripes fabricated from the large‐grained films had a consistently longer life, higher activation energy, and lower standard deviation of the life distribution than stripes fabricated from fine‐grained films. These results are interpreted in terms of the nature of flux divergences in the two films. Calculations give the magnitude of vacancy supersaturations at various structural divergences present in the films studied.read more
Citations
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Reliability and early failure in Cu/oxide dual-damascene interconnects
TL;DR: In this paper, the issue of the dual-damascene (DD) process and its potential effect on EM reliability is described with special focus on the peculiarities of the DD interconnect architecture in comparison to the previous subtractively etched Al-based interconnect technology.
Journal ArticleDOI
Results of a 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, part 2 survey of dominant IC failure mechanisms and analysis of failure causes
TL;DR: In this article, the most important failure mechanisms of monolithic ICs such as bond plague and voiding, metallization failures such as Al-Si reactions and sintering pit formation as well as mass transport phenomena, e.g. thermo-and electromigration, further corrosion and some problems related to mounting and encapsulation, all of which may cause wearout and a limited life of ICs.
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Selective tungsten CVD on submicron contact hole
TL;DR: In this paper, the deposition properties of selective chemically vapor-deposited tungsten for filling the deep sub-half micron contact holes using the process of silane reduction of Tungsten hexafluoride were investigated.
Journal ArticleDOI
Electric-Current Induced Crack Growth in Thin Films: Experimental Observations and Continuum Description:
TL;DR: In this article, a 0.2 mmthick, pure aluminum film was deposited by high vacuum evaporation coating (HVEC) and patterned into test structures of varying widths.
Journal ArticleDOI
Enhancing the reliability of n+-p junction diodes using plasma treated tantalum barrier film
TL;DR: In this paper, the properties of Ta barrier films treated with various plasma nitridations have been investigated by Cu/barrier/Si, and it is attributed to the formation of a new amorphous layer on Ta surface after the plasma treatment.
References
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Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Journal ArticleDOI
Current-induced marker motion in gold wires☆
H.B. Huntington,A.R. Grone +1 more
TL;DR: In this paper, the motion of light transverse scratches, used as markers, has been observed on the surface of gold wires carrying current densities of about 104 A/cm2 for periods of several days.
Journal ArticleDOI
Electromigration in Thin Al Films
I. A. Blech,E. S. Meieran +1 more
TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
Journal ArticleDOI
Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
R. Rosenberg,L. Berenbaum +1 more
TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
Journal ArticleDOI
Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films
Ilan A. Blech,Eugene S. Meieran +1 more
TL;DR: In this paper, the process of electrotransport in Al thin films was directly observed by transmission electron microscopy, and it was found that hole formation occured in regions where the electron flow was in the direction of increasing temperature.