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Journal ArticleDOI

Electromigration Damage in Aluminum Film Conductors

M. J. Attardo, +1 more
- 01 May 1970 - 
- Vol. 41, Iss: 6, pp 2381-2386
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TLDR
In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.
Abstract
Electromigration studies of large‐ and fine‐grain aluminum films showed that fine‐grain films were characterized by a mixed orientation and a grain size of ≈2 μ, and that large‐grain films had a highly preferred 98% 〈111〉 orientation and a grain size of ≈8 μ. Stripes fabricated from the large‐grained films had a consistently longer life, higher activation energy, and lower standard deviation of the life distribution than stripes fabricated from fine‐grained films. These results are interpreted in terms of the nature of flux divergences in the two films. Calculations give the magnitude of vacancy supersaturations at various structural divergences present in the films studied.

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Citations
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Journal ArticleDOI

Mechanism of Electromigration Failure in Al Thin Film Interconnects Containing Sc

TL;DR: In this paper, the role of Sc on electromigration failure was investigated in Al interconnects with 0.1 and 0.3 wt.% Sc as a function of post-pattern annealing time.
Journal ArticleDOI

Electromigration Failure Kinetics in Al Alloy Lines: A Microstructure-Based Constitutive Equation

TL;DR: In this article, the authors proposed a simple constitutive equation that describes the electromigration failure kinetics in naturally passivated Al(Cu) quasi-bamboo lines and analyzed the dependence of the factors t0 and l0 on current density, test temperature, line geometry, and Al2Cu precipitate distribution.
Journal ArticleDOI

Electromigration Behavior of Aluminum Films Deposited by Partially Ionized Beam

TL;DR: In this article, a partially ionized beam was stressed by a current density of 2×106 A/cm2 at a temperature of 300°C. The films prepared at the acceleration voltage of 5 kV lived over 200 hours.
Journal ArticleDOI

In-situ electromigration studies using resistometry

TL;DR: In this paper, the effect of electromigration on unpassivated aluminum thin films has been studied using the resistometry method, and it was found that there are three stages of temporal evolution for sputtered films.
Journal ArticleDOI

High Performance Metallization Issues for Ulsi

TL;DR: In this article, the authors present a simulation of fundamental degradation modes and design software tools for interconnects to optimize interconnect metallization ground rules early in the development cycle.
References
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Journal ArticleDOI

Electromigration—A brief survey and some recent results

TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
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Current-induced marker motion in gold wires☆

TL;DR: In this paper, the motion of light transverse scratches, used as markers, has been observed on the surface of gold wires carrying current densities of about 104 A/cm2 for periods of several days.
Journal ArticleDOI

Electromigration in Thin Al Films

TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
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Resistance monitoring and effects of nonadhesion during electromigration in aluminum films

TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
Journal ArticleDOI

Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films

TL;DR: In this paper, the process of electrotransport in Al thin films was directly observed by transmission electron microscopy, and it was found that hole formation occured in regions where the electron flow was in the direction of increasing temperature.