Journal ArticleDOI
Electromigration Damage in Aluminum Film Conductors
M. J. Attardo,R. Rosenberg +1 more
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In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.Abstract:
Electromigration studies of large‐ and fine‐grain aluminum films showed that fine‐grain films were characterized by a mixed orientation and a grain size of ≈2 μ, and that large‐grain films had a highly preferred 98% 〈111〉 orientation and a grain size of ≈8 μ. Stripes fabricated from the large‐grained films had a consistently longer life, higher activation energy, and lower standard deviation of the life distribution than stripes fabricated from fine‐grained films. These results are interpreted in terms of the nature of flux divergences in the two films. Calculations give the magnitude of vacancy supersaturations at various structural divergences present in the films studied.read more
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Electromigration In Ulsi Interconnections
TL;DR: Both the wafer level and package EM testing methodologies are presented, and the rigorous data analysis that takes into account of the bimodal distribution of EM test data is presented, in order to accurately assess the EM of an interconnection.
Journal ArticleDOI
Correlation of texture with electromigration behavior in Al metallization
TL;DR: In this paper, texture analysis of aluminum films was performed at three different conditions, such that texture is the only microstructural variable, and it was shown that random and (111) fiber texture components are present in the films deposited by both partially ionized beam (PIB), physical vapor deposition and sputtering.
Journal ArticleDOI
Electromigration in thin-film interconnection lines: models, methods and results
TL;DR: In this article, the authors present a review of the physical model based on the general diffusion theory to describe the EM failure mechanism; the influence of the different stress parameters (temperature, current density, mechanical stress), of material properties (structural inhomogeneities, chemical composition) and line topography are taken into account.
Journal ArticleDOI
The effect of copper additions on electromigration in aluminum thin films
TL;DR: In this paper, the results of experiments conducted with the goal of understanding the mechanism of this effect are presented, where the relationships between lifetimes and the mode of preparation, the composition, and the heat treatment of the samples are explored.
References
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Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Journal ArticleDOI
Current-induced marker motion in gold wires☆
H.B. Huntington,A.R. Grone +1 more
TL;DR: In this paper, the motion of light transverse scratches, used as markers, has been observed on the surface of gold wires carrying current densities of about 104 A/cm2 for periods of several days.
Journal ArticleDOI
Electromigration in Thin Al Films
I. A. Blech,E. S. Meieran +1 more
TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
Journal ArticleDOI
Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
R. Rosenberg,L. Berenbaum +1 more
TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
Journal ArticleDOI
Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films
Ilan A. Blech,Eugene S. Meieran +1 more
TL;DR: In this paper, the process of electrotransport in Al thin films was directly observed by transmission electron microscopy, and it was found that hole formation occured in regions where the electron flow was in the direction of increasing temperature.