Journal ArticleDOI
Electronic Structures of Semiconductor Alloys
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In this paper, the problem of the band structure of semiconductor alloy systems is treated by both the dielectric two-band method and by the use of an empirical (local) pseudopotential.Abstract:
The problem of the band structure of semiconductor alloy systems is treated by both the dielectric two-band method and by the use of an empirical (local) pseudopotential. With both methods, calculations are made in the virtual-crystal approximation assuming linear dependence on alloy concentration of the lattice constant and the parameters of the two methods. Contrary to some previous assertions, both methods predict, in general, a nonlinear dependence of the interband gaps on concentration. An estimate is also made of the effects of second-order perturbations to the virtual-crystal approximation, i.e., the effect of disorder. Of particular interest are the lowest direct and indirect energy gaps and the deviations of these from linearity. The treatment is confined to alloys of compounds having the formula ${A}^{N}{B}^{8\ensuremath{-}N}$, but quaternary and more complicated alloys may be treated as easily as the ternary alloys to which most previous experimental work has been confined. Results are compared to experiment and to the empirical formula of Thompson and Woolley. We find that, with one free parameter, the dielectric method gives good agreement with experiment, but that the local-pseudopotential method apparently does not yield satisfactory results for this problem.read more
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Journal ArticleDOI
The pseudoquaternary phase diagram of the Ga-In-As-Sb system
TL;DR: The pseudoquaternary phase diagram of the Ga-In-As-Sb quaternary system has been determined experimentally as discussed by the authors, and the solidus data were determined by the liquid phase epitaxial method.
Journal ArticleDOI
Interpolating semiconductor alloy parameters: Application to quaternary III-V band gaps
TL;DR: In this article, a rationalized biquadratic interpolation algorithm for calculating quaternary semiconductor parameters and applying it to determine the band gaps of AlGaInAs, AlGaIp, AlInAsSb, AlIpAsSsb, GaInPAs, and GaInSb over complete compositional ranges is presented.
Journal ArticleDOI
Relativistic band structure of ternary II-VI semiconductor alloys containing Cd, Zn, Se and Te
TL;DR: In this article, the relativistic band structure and band-gap bowing factors of ternary II-VI semiconductor alloys containing Cd, Zn, Se and Te are calculated by the ab initio self-consistent pseudopotential method with spin-orbit correction.
Journal ArticleDOI
Origin of the large band-gap bowing in highly mismatched semiconductor alloys
Junqiao Wu,Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Eugene E. Haller,Ireneusz Miotkowski,A. K. Ramdas,C.-H. Su,Iam Keong Sou,Rupert C. C. Perera,Jonathan D. Denlinger +12 more
TL;DR: In this paper, a combination of optical and soft x-ray fluorescence techniques was used to investigate the composition dependence of the band edge energies in ZnSe(1-x)Te(x) and ZnS( 1-x), alloys with small and large Te content.
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Composition and temperature dependence of electron band structure in ZnSe1−xSx
K. Kassali,Nadir Bouarissa +1 more
TL;DR: In this article, the authors used the empirical pseudo-potential method combined with the improved virtual crystal approximation where compositional disorder is included as an effective potential, to obtain the results of composition and temperature-dependent optical band gaps, of the ZnSe1−xSx (0≤x≤1) type alloys.