Journal ArticleDOI
Electronic Structures of Semiconductor Alloys
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In this paper, the problem of the band structure of semiconductor alloy systems is treated by both the dielectric two-band method and by the use of an empirical (local) pseudopotential.Abstract:
The problem of the band structure of semiconductor alloy systems is treated by both the dielectric two-band method and by the use of an empirical (local) pseudopotential. With both methods, calculations are made in the virtual-crystal approximation assuming linear dependence on alloy concentration of the lattice constant and the parameters of the two methods. Contrary to some previous assertions, both methods predict, in general, a nonlinear dependence of the interband gaps on concentration. An estimate is also made of the effects of second-order perturbations to the virtual-crystal approximation, i.e., the effect of disorder. Of particular interest are the lowest direct and indirect energy gaps and the deviations of these from linearity. The treatment is confined to alloys of compounds having the formula ${A}^{N}{B}^{8\ensuremath{-}N}$, but quaternary and more complicated alloys may be treated as easily as the ternary alloys to which most previous experimental work has been confined. Results are compared to experiment and to the empirical formula of Thompson and Woolley. We find that, with one free parameter, the dielectric method gives good agreement with experiment, but that the local-pseudopotential method apparently does not yield satisfactory results for this problem.read more
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Journal ArticleDOI
InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy
Yoshiaki Nakata,Yoshihiro Sugiyama,Tsuguo Inata,Osamu Ueda,S. Sasa,Shunichi Muto,Toshio Fujii +6 more
TL;DR: In this paper, a cross-sectional lattice image of InGaAs/AlAsSb QWs taken along the [100] axis showed atomically smooth heterointerfaces.
Journal ArticleDOI
Second order nonlinear optical properties of AIBIIIC2VI chalcopyrite semiconductors
TL;DR: In this paper, the second-order nonlinear optical properties of ternary chalcopyrite semiconductors have been studied, and the NLO tensor coefficients (d36) of the A-C and B-C bonds in AIBIIIC2VI semiconductor have been calculated at 10.6 µm using plasma oscillations theory of solids.
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High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.
Jessica L. Boland,Francesca Amaduzzi,Sabrina Sterzl,Heidi Potts,Laura M. Herz,Anna Fontcuberta i Morral,Michael B. Johnston +6 more
TL;DR: It is shown that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35, and the temperature-dependent electron mobility via both terahertz and Raman spectroscopy is extracted.
Journal ArticleDOI
Optical properties of (CdTe)1‐x(CdSe)x and (CdTe)1‐x(cds)x systems
Journal ArticleDOI
Exciton absorption in CdS1-xSex and ZnSe1-xTex solid solutions
TL;DR: In this paper, a model for describing the exciton absorption spectra of CdS1-xSex and ZnSe1-tex semiconductor solid solutions has been developed.