Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations.
TLDR
It is shown by atomistic simulations that a consistent part of the green gap in c-plane InGaN/GaN-based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any In GaN alloy.Abstract:
White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c-plane InGaN/GaN-based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.read more
Citations
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Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.
TL;DR: The basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices are described.
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Continuous wave amplified spontaneous emission in phase-stable lead halide perovskites
Philipp Brenner,Ofer Bar-On,Marius Jakoby,Isabel Allegro,Bryce S. Richards,Ulrich W. Paetzold,Ian A. Howard,Jacob Scheuer,Uli Lemmer +8 more
TL;DR: Results indicate that easily-fabricated single-phase perovskite thin films can sustain CW stimulated emission, potential at higher temperatures as well, by further optimization of the material quality in order to extend the carrier lifetimes.
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An optical-thermal model for laser-excited remote phosphor with thermal quenching
TL;DR: In this article, an optical-thermal coupling model was developed to predict the high phosphor temperature of LERP, and the critical incident power against thermal quenching under various factors was systematically studied.
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Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
A. Even,G. Laval,Olivier Ledoux,Pierre Ferret,David Sotta,Eric Guiot,Francois Levy,Ivan-Christophe Robin,Amelie Dussaigne +8 more
TL;DR: In this paper, the impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full GaN heterostructure was investigated, and the effect of photoluminescence (PL) emission redshift was observed on InyGa1-yN buffer layers and also on InxGa 1-xN/InyGa 1yN multiple quantum wells (MQWs).
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Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
Brandon Mitchell,Brandon Mitchell,Brandon Mitchell,Volkmar Dierolf,Tom Gregorkiewicz,Tom Gregorkiewicz,Yasufumi Fujiwara +6 more
TL;DR: In this article, the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them are addressed and a large emphasis is placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED.
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