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Open AccessJournal ArticleDOI

End-to-End Analysis of Integration for Thermocouple-Based Sensors Into 3-D ICs

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TLDR
This paper proposes a low-overhead design methodology by linking the sensor placement task with the existing thermal TSV planning phase for 3-D ICs, and demonstrates that it can achieve high accuracy (1 °C error) in temperature tracking while still maintaining the effectiveness of the thermal TSVs in heat management.
Abstract
Solutions to the integration challenges of a new thermal sensor technology into 3-D integrated circuits (ICs) will be discussed in this paper Our proposed architecture uses bimetallic thin-film thermocouples, which are thermally linked to points of measurement throughout the 3-D stack with dedicated vias These vias will be similar to thermal through-silicon vias (TSVs) in structure, yet different in functionality We propose a low-overhead design methodology by linking the sensor placement task with the existing thermal TSV planning phase for 3-D ICs A fraction of thermal TSV resources is decoupled from their original use and repurposed for the temperature sensing infrastructure Tradeoffs concerning the reduction of the thermal TSV resources are investigated Furthermore, we present an end-to-end system, including the physical realization of the sensor network as well as its analog interface circuitry with the sensor data sampling unit We demonstrate the operation and correctness of this interface with transistor-level simulations Next, through thermal modeling and simulation using a state-of-the-art tool (FloTHERM), we demonstrate that we can achieve high accuracy (1 °C error) in temperature tracking while still maintaining the effectiveness of the thermal TSVs in heat management (conforming to a peak temperature constraint of 95 °C)

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Citations
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Journal ArticleDOI

Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

TL;DR: The fundamental fabrication technologies of 3D integration are introduced, the recent progresses of MEMS and microsystems using 3D Integration and TSV technologies are reviewed, and the conclusions are made and the future trends are discussed.
Dissertation

Modèles compacts électro-thermiques du premier ordre et considération de bruit pour les circuits 3D

Yue Ma
TL;DR: In this article, a methode de conception globale for le circuit integre 3D dans le domaine electrique, thermique, electrothermique et aussi le bruit is presented.
Journal ArticleDOI

Temperature-Aware DRAM Cache Management—Relaxing Thermal Constraints in 3-D Systems

TL;DR: It is shown that in many cases it is better to disable hot portions of the cache rather than apply DTM and slow down the processor, which can improve the performance of DRAM-targeted DTM by 26.1% on average which make 3-D systems more practical for the future high-performance computing.
Journal ArticleDOI

A High-Efficiency Design Method of TSV Array for Thermal Management of 3-D Integrated System

TL;DR: In this paper , a high-efficient design method of TSV array for thermal management of 3D integrated system is developed based on the equivalent thermal conductivity (ETC) model and particle swarm optimization algorithm.
Journal ArticleDOI

A High-Efficiency Design Method of TSV Array for Thermal Management of 3-D Integrated System

TL;DR: In this paper , a high-efficient design method of through silicon via (TSV) array for thermal management of 3D integrated system is developed based on the equivalent thermal conductivity (ETC) model and the particle swarm optimization algorithm.
References
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Journal ArticleDOI

The Development of a Stable Citrate Electrolyte for the Electrodeposition of Copper‐Nickel Alloys

TL;DR: In this paper, the stability of citrate electrolytes for the electrodeposition of copper-nickel alloys and multilayers has been investigated and it was found that electrolytes operating at pH 4 are unstable due to the formation of an insoluble citrate complex.
Journal ArticleDOI

Thermopower in Thin‐Film Copper—Constantan Couples

TL;DR: In this article, the thickness dependence of the thermal emf of thin-film copper thermocouples at room temperature and above was investigated and it was shown that when the thickness of both elements comprising the thermocouple is greater than ∼1200 A, the thermal response time of the thermouples as measured with a pulsed laser beam heating source is less than 10−6 sec.
Proceedings ArticleDOI

Thermal-aware cell and through-silicon-via co-placement for 3D ICs

TL;DR: This is the first thermal-aware 3D placement tool that directly takes into consideration the thermal and area impact of though-silicon-vias (TSVs), and suggests that considering thermal effects of TSVs is necessary and effective during the placement stage.
Journal ArticleDOI

Temperature-modulated graphene oxide resistive humidity sensor for indoor air quality monitoring

TL;DR: The effectiveness of integrating GO on a micro-hotplate CMOS-compatible platform enabling temperature modulation schemes to be easily applied in order to achieve compact, low power, low cost humidity IAQ monitoring is demonstrated.
Proceedings ArticleDOI

Thermal via allocation for 3D ICs considering temporally and spatially variant thermal power

TL;DR: This paper develops an accurate and efficient thermal-via allocation considering the temporally and spatially variant thermal-power, and is solved by a sequential quadratic programming algorithm with use of sensitivities from the macromodel.