Journal ArticleDOI
Engineering Synaptic Plasticity through the Control of Oxygen Vacancy Concentration for the Improvement of Learning Accuracy in a Ta2O5 Memristor
Hyun Gyu Hwang,Yeon Pyo,Jong Un Woo,In Su Kim,Sun Woo Kim,Dae Su Kim,Bum-Seok Kim,Ji-Heon Jeong,Sahn Nahm +8 more
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TLDR
In this article , the authors used a convolutional neural network (CNN) to simulate a Ta2O5 memristor with high conductance modulation linearity (CML) and showed that the change rate of synaptic weight variation in the STDP curve is related to the learning accuracy.About:
This article is published in Journal of Alloys and Compounds.The article was published on 2022-01-01. It has received 12 citations till now. The article focuses on the topics: Memristor & Plasticity.read more
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Journal ArticleDOI
Variability in Resistive Memories
Juan Bautista Roldán,Enrique Miranda,D. Maldonado,Alexey Mikhaylov,N. V. Agudov,Alexander A. Dubkov,M. N. Koryazhkina,Mireia Bargallo Gonzalez,Marco A. Villena,Samuel Poblador,M. Saludes-Tapia,Rodrigo Picos,Francisco Jiménez-Molinos,Stavros G. Stavrinides,E. Salvador,F. J. Alonso,Francesca Campabadal,Bernardo Spagnolo,Mario Lanza,Leon O. Chua +19 more
TL;DR: In this article , a review of the most recent advancements in the treatment of variability in resistive memories is presented, with the aim of presenting the most recently advancements in their treatment, and special emphasis is put on the modeling part because the accurate representation of the phenomenon is critical for circuit designers.
Journal ArticleDOI
Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapses
TL;DR: In this article , a stable and highly controllable multistate analog memory system was developed using ZnO-based memristors, which exhibited electrical and optical synaptic properties similar to those of biological synapses.
Journal ArticleDOI
Interface engineering for a VO based memristor with an ultralow switching voltage and logic functions
TL;DR: In this article , the Schottky barrier is revealed to be caused by the O2- drift in the TiOx interlayer, which has the same direction to the external electric field generated by the set voltage.
Journal ArticleDOI
Synaptic and Gradual Conductance Switching Behaviors in CeO2/Nb-SrTiO3 Heterojunction Memristors for Electrocardiogram Signal Recognition.
TL;DR: Wang et al. as discussed by the authors reported a CeO2/Nb-SrTiO3 heterojunction memristor whose conductance could be gradually tuned under both positive and negative pulse trains.
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Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors
Dong-Uk Kim,Heesung Lee,Tae Jun Yang,Woo Sik Choi,Changwook Kim,Sung-Jin Choi,Jong-Ho Bae,Dong Myong Kim,Sungjun Kim,Dae Hwan Kim +9 more
TL;DR: In this paper , the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO2/p+Si memristor devices was studied and a switching model based on using a native oxide as the Schottky barrier was proposed.
References
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Journal ArticleDOI
Gradient-based learning applied to document recognition
Yann LeCun,Léon Bottou,Léon Bottou,Yoshua Bengio,Yoshua Bengio,Yoshua Bengio,Patrick Haffner +6 more
TL;DR: In this article, a graph transformer network (GTN) is proposed for handwritten character recognition, which can be used to synthesize a complex decision surface that can classify high-dimensional patterns, such as handwritten characters.
Gradient-based learning applied to document recognition
Yann LeCun,Léon Bottou,Léon Bottou,Yoshua Bengio,Yoshua Bengio,Yoshua Bengio,Patrick Haffner,Patrick Haffner +7 more
TL;DR: This paper reviews various methods applied to handwritten character recognition and compares them on a standard handwritten digit recognition task, and Convolutional neural networks are shown to outperform all other techniques.
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The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI
Can programming be liberated from the von Neumann style?: a functional style and its algebra of programs
TL;DR: A new class of computing systems uses the functional programming style both in its programming language and in its state transition rules; these systems have semantics loosely coupled to states—only one state transition occurs per major computation.